Description |
10MS, 8 EIAJ SOIC, InD TEMP, GREEn, 2.7V(BIOS flash) 10MS, 8 SOIC, InD TEMP, GREEn, 2.7V(BIOS flash) DIE SALE, 2.7V, 7 MIL(BIOS flash) 10MS, 8 SAP, InD, ROHS-B, 2.7V(BIOS flash) 8-SOIC,AUTO TEMP,2.7V(SERIAL EE) 10MS, 8 PDIP, InD TEMP, 2.7V(SERIAL EE) 10MS, 8 PDIP, EXT TEMP, GREEn,2.7V(SERIAL EE) 10MS, 8 TSSOP, InT TEMP, GREEn, 1.8V(SERIAL EE) 10MS, 8 PDIP, InT TEMP, GREEn, 2.7V(SERIAL EE) 10MS, DIE 1.8V, 11 MILS THICKnESS(SERIAL EE) 10MS, 8 PDIP, InD TEMP, GREEn, 2.7V(SERIAL EE) 10MS, 8 PDIP, InD TEMP, GREEn,2.7V(SERIAL EE) 8 ULTRA THIn,MInI MAP,PB/HALO FREE,InD T(SERIAL EE) 现场可编程门阵列(FPGA 10MS, 8 SOIC, EXT TEMP, GREEn, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA 10MS, 8 SOIC, InT TEMP, GREEn, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA 10MS, 8 PDIP, EXT TEMP, GREEn, 2.7V(SERIAL EE)
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