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STMicroelectronics N.V.
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STD95N04 STP95N04 -STD95N04
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| OCR Text |
...=0 ISD=80a, di/dt = 100A/s, VDD=30v, Tj=150C 45 60 2.8 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
(1) Current limited by package (2) Pulse width limited by safe operating area (3) ISD 80 A, di/dt 400A/s, VDS V(BR)DSS... |
| Description |
N-CHANNEL 40V - 5.4mohm - 80a - DPAK - TO-220 STripFET Power MOSFET N沟道40V 5.4mohm - 80a的DPAK -20 STripFET功率MOSFET
N-CHANNEL 40V - 5.1mOhm - 80a DPAK Planar STripFET MOSFET
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| File Size |
269.63K /
14 Page |
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Infineon
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| Part No. |
SPI80N03S2L-04
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| OCR Text |
...ate voltage drain current
V DS=30v, V GS=0V, Tj=25C V DS=30v, V GS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 5 4.6 3.6 3.2 6.5 6.2 4.2 3.9
...80a V GS=4.5V, ID=80a, SMD version
Drain-source on-state resistance4)
V GS=10V, ID=80a V GS=10V,... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 4.2mOhm, 80a, LL
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| File Size |
526.74K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SPI80N03S2L-05
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| OCR Text |
...ate voltage drain current
V DS=30v, V GS=0V, Tj=25C V DS=30v, V GS=0V, Tj=125C
A 0.01 10 1 1 100 100 nA m 5.6 5.2 4 3.7 7.5 7.2 5.2 4.9
...80a VR =15V, IF=lS, diF /dt=100A/s
Symbol
Conditions min.
Values typ. 110 2500 975 215 1.75... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 5.2mOhm, 80a, LL
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| File Size |
520.57K /
8 Page |
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it Online |
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Infineon
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| Part No. |
SPI80N03S2L-06
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| OCR Text |
...gate voltage drain current
VDS=30v, V GS=0V, T j=25C VDS=30v, V GS=0V, T j=125C
IDSS IGSS 0.01 10 1 1 100 100
A
Gate-source leakag...80a VGS=4.5V, ID=80a, SMD version
RDS(on) RDS(on) 5 4.6 6.2 5.9 7 6.6 9.5 9.2
m
Drain-sourc... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 6.2mOhm, 80a, LL
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| File Size |
167.14K /
8 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB160NF3LL_06 B160NF3LL STB160NF3LL STB160NF3LL06
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| OCR Text |
30v - 0.0028 - 160A - D2PAK STripFETTM III Power MOSFET
General features
Type STB160NF3LL VDSS 30v RDS(on) <0.0033 ID 160A(1)
1. Value ...80a VGS = 4.5V, ID = 80a 1 0.0028 0.0035 0.0033 0.0048 Min. 30 1 10 100 Typ. Max. Unit V A A nA V
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| Description |
N-channel 30v - 0.0028ohm - 160A - D2PAK STripFET TM III Power MOSFET
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| File Size |
386.78K /
13 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-H5 SPB80N06S2L-H5
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| OCR Text |
...410 410 28 35 110 33 ns
VDD =30v, VGS =10V, ID =80a, RG =1.2
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14 53 145 3
18 80 190 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Invers... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 5 mOhm
OptiMOS Power-Transistor
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| File Size |
310.70K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-11 SPB80N06S2L-11
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| OCR Text |
... 620 200 13 29 68 27 ns
VDD =30v, VGS =10V, ID =80a, RG =3
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7 20 60 3.6
9 30 80 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse di... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 11 mOhm
OptiMOS Power-Transistor
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| File Size |
310.85K /
8 Page |
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it Online |
Download Datasheet |
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