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882204 2SC4324 BZG0447 225701 27256 RM809615 AN2335SC C5227M
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  3300-3900 Datasheet PDF File

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    BOURNS INC
Part No. SRR6603-332M
Description 1 ELEMENT, 3300 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD

File Size 241.28K  /  2 Page

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    P295BQ392M500A

Kemet Corporation
Part No. P295BQ392M500A
Description Film, Metallized Paper, Safety, P295, 3900 pF, 20%, 1,500 V, 500 V, 115C, Lead Spacing = 15mm

File Size 49.59K  /  1 Page

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    SI4532DY

TEMIC SEMICONDUCTORS
Part No. SI4532DY
Description 3900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 205.47K  /  6 Page

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    ABB, Ltd.
Part No. 5SHY35L4512
Description Asymmetric Integrated Gate- Commutated Thyristor 3300 A, 4500 V, ASSYMETRIC SCR

File Size 431.23K  /  9 Page

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Part No. 0603SAJ0332T50
Description RESISTOR, 0.1 W, 5 %, 200 ppm, 3300 ohm, SURFACE MOUNT, 0603 CHIP

File Size 2,444.12K  /  4 Page

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    PM1200HCE330- PM1200HCE330-1 PM1200HCE330

Powerex Power Semiconductors
Part No. PM1200HCE330- PM1200HCE330-1 PM1200HCE330
Description -High Voltage Intelligent Power Module (1200 Amperes/3300 Volts)

File Size 83.19K  /  4 Page

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    CM800E2Z-66H CM8.0E2Z-66H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM800E2Z-66H CM8.0E2Z-66H
Description 800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system

File Size 47.43K  /  4 Page

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    Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
Part No. CM1200HB-66H
Description HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT

File Size 50.20K  /  4 Page

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    CM1200HG-66H

POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM1200HG-66H
Description 1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.95K  /  7 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM400DY-66H
Description HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT

File Size 42.85K  /  4 Page

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