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  3360 Datasheet PDF File

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    2SC4959 2SC4959-T2 2SC4959-T1 2SC4959NE68530

NEC[NEC]
NEC, Corp.
Part No. 2SC4959 2SC4959-T2 2SC4959-T1 2SC4959NE68530
OCR Text ...0 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 S22 ANG -26.2 -32.9 -32.9 -32.8 -35.9 -33.3 -36.5 -36.2 -39.5 -42.3 -46.6 -48.8 -47.2 -55.1 -51.2 5 2SC4959 No part of this document may be copied or reproduced in an...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD 高频低噪声放大器NPN硅外延晶体管超小型模

File Size 45.62K  /  6 Page

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    APTM10DAM02G

Microsemi Corporation
Part No. APTM10DAM02G
OCR Text ...25C 400 1 1.4 0.9 60 110 800 3360 www.microsemi.com 2-6 APTM10DAM02G- Rev 1 July, 2006 APTM10DAM02G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resi...
Description Boost chopper MOSFET Power Module

File Size 263.10K  /  6 Page

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    APTM10DAM02

Advanced Power Technology
Part No. APTM10DAM02
OCR Text ...25C 400 1 1.4 0.9 60 110 800 3360 APT website - http://www.advancedpower.com 2-6 APTM10DAM02 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temper...
Description Boost chopper MOSFET Power Module

File Size 294.79K  /  6 Page

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    APTM10SKM02G

Microsemi Corporation
Part No. APTM10SKM02G
OCR Text ...25C 400 1 1.4 0.9 60 110 800 3360 www.microsemi.com 2-6 APTM10SKM02G- Rev 1 July, 2006 APTM10SKM02G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resi...
Description Buck chopper MOSFET Power Module

File Size 264.22K  /  6 Page

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    APTM10SKM02

Advanced Power Technology
Part No. APTM10SKM02
OCR Text ...25C 400 1 1.4 0.9 60 110 800 3360 APT website - http://www.advancedpower.com 2-6 APTM10SKM02 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temper...
Description Buck chopper MOSFET Power Module

File Size 295.54K  /  6 Page

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    FMM5805X

Eudyna Devices Inc
Part No. FMM5805X
OCR Text ...80 710 VDD2 1160 VGG1 2210 VDD4 3360 2940 Unit: m RFout 1115 1315 RFin 110 0 170 235 0 710 0 110 VGG2 1160 VDD3 2210 VGG2 2940 VDD5 3470 Chip Size: 3.4730m x 2.6330m VGG1, VGG2: One bonding is available Chip Thickne...
Description 17.5-20GHz Power Amplifier MMIC

File Size 2,126.07K  /  4 Page

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    4AV20F-T2 4AV15F 4AV16F 4AV17F 4AV18F 4AV19F 4AV20F 4AV20F-T1

Honeywell Solid State Electronics Center
Part No. 4AV20F-T2 4AV15F 4AV16F 4AV17F 4AV18F 4AV19F 4AV20F 4AV20F-T1
OCR Text ...l: 1-800-537-6945 USA 1-800-737-3360 Canada 1-815-235-6847 International FAX 1-815-235-6545 USA INTERNET www.honeywell.com/sensing info.sc@honeywell.com Sensing and Control Honeywell Inc. 11 West Spring Street Freeport, Illinois 61032 P...
Description Installation Instructions

File Size 61.59K  /  4 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AO4708
OCR Text ...t=300A/s 7 31 5 13 12 15 1.5 52 3360 8.7 13.1 10.5 1.8 Min 30 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 140.95K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT40M35JVFR
OCR Text ...710 80 340 20 30 75 14 20160 3360 1605 1065 120 510 40 60 115 28 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sym...
Description 93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET

File Size 115.79K  /  4 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT40M35JVR
OCR Text ...710 80 340 20 30 75 14 20160 3360 1605 1065 120 510 40 60 115 28 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 400V 93A 0.035 Ohm

File Size 72.49K  /  4 Page

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