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  35dbm Datasheet PDF File

For 35dbm Found Datasheets File :: 319    Search Time::7.672ms    
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    MAXIM - Dallas Semiconductor
Part No. MAX2386 MAX2385-MAX2386 MAX2385
OCR Text ...e, RBIAS = 36k GPS mode, PIN = -35dbm/tone Reverse Isolation (S12) MIXER PERFORMANCE HGHL/HGLL mode MG mode LG mode Gain ULG mode GPS mode (MAX2385) GPS mode (MAX2386) TA = +25C, fRF = 851MHz (Note 6) TA = +25C, fRF = 851MHz (Note 6) TA = +...
Description From old datasheet system
CDMA GPS LNA/Mixers

File Size 250.27K  /  18 Page

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    Sony
Part No. CXG1047FN
OCR Text ... 3:1 After matching cct Po = 35dbm@3.5V After matching cct Po = 35dbm@3.5V After matching cct Po = 35dbm@3.5V -30 -35 -40 -25 -28 -33 dBc dBc dBc -3- CXG1047FN Item Harmonics Tx = 1750MHz 2nd harmonics 3rd harmonics 4th...
Description Dual-Band 3V Power Amplifier for GSM900/1800 Applications
From old datasheet system

File Size 99.94K  /  9 Page

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    Zarlink
Part No. SL1461SA 255
OCR Text ...n input signal between -30 and -35dbm. This ensures optimum linearity and threshold performance, and gives a good safety margin over the typical sensitivity of -40dBm. The output of the preamplifier is fed to the mixer section which is of b...
Description Wideband PLL FM Demodulator
From old datasheet system

File Size 311.56K  /  13 Page

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    Maxim
Part No. MAX4269 MAX4267 MAX4265-MAX4270
OCR Text ...= 5MHz ) -59dBc (fC = 100MHz) o 35dbm IP3 (fC = 20MHz) o 8nV/Hz Voltage Noise Density o 100MHz 0.1dB Gain Flatness (MAX4268) o 900V/s Slew Rate o 45mA Output Driving Capability o Disable Mode Places Outputs in High-Impedance State Featur...
Description "Dual, 450MHz, Ultra-Low- Distortion, Single-Supply Op Amp with Enable (AV> 2)"
" Single, 300MHz, Ultra-Low- Distortion, Single-Supply Op Amp with Enable (AV> 5)"
From old datasheet system

File Size 479.25K  /  19 Page

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    HMC469MS8G

HITTITE[Hittite Microwave Corporation]
Part No. HMC469MS8G
OCR Text ...livers up to +20 dBm P1dB with +35dbm OIP3 for specific application bands through 4 GHz. Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25 C Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC -...
Description SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz

File Size 303.35K  /  8 Page

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    RFMD[RF Micro Devices]
Part No. RF2173PCBA RF2173
OCR Text ... =0.2V to 2.6V POUT =-10dBm to +35dbm DC to 2MHz VAPC1,2 =2.6V VAPC1,2 =0V VAPC1,2 =0 to 2.6V Specifications Nominal operating limits, POUT <+35dbm With maximum output load VSWR 6:1, POUT <+35dbm DC Current at POUT,MAX Idle Current, PIN <-3...
Description    3V GSM POWER AMPLIFIER

File Size 137.11K  /  10 Page

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    PF08103B

HITACHI[Hitachi Semiconductor]
Part No. PF08103B
OCR Text ... = +85C Vapc = 0.2 V Pout GSM = 35dbm (GSM mode) Measured at f = 1760 to 1830MHz, Pin(GSM) = +1dBm Pout GSM Test Condition Pout GSM = 35dbm, Vapc = controlled tr, t f 1 2 s = 0 to 35.0dBm No parasitic...
Description MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

File Size 33.47K  /  7 Page

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    Q68000-A8884 CGY92

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q68000-A8884 CGY92
OCR Text ...D=3V; VD=5V; (Pout=32dBm) (Pout=35dbm) Harmonics (Pin=10dBm) Input VSWR VD=3.0V; Third order intercept point 2f0 3f0 2f0 3f0 VD=3V; pulsed with a duty cycle of 10%; f1=900.00MHz; f2=900.20MHz; IP3 IP3 Third order intercept po...
Description    GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system

File Size 159.13K  /  14 Page

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    FLL21E040IK

Eudyna Devices Inc
Part No. FLL21E040IK
OCR Text ... Frequency [GHz] Pin=20dBm Pin=35dbm Pin=25dBm P1dB Pin=30dBm 48 46 44 42 40 38 36 34 32 30 28 26 101214161820222426283032343638 Input Pow er[dBm ] 110 100 90 80 70 60 50 40 30 20 10 0 Output Power [dBm] Output Power [dBm] P...
Description High Voltage - High Power GaAs FET

File Size 367.92K  /  6 Page

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    FLL21E060IY

Eudyna Devices Inc
Part No. FLL21E060IY
OCR Text ...n=15dBm Pin=30dBm Pin=20dBm Pin=35dbm Pin=25dBm Two-Carrier IMD(ACLR) vs. Output Power VDS=28V IDS=630mA f0=2.135, f1=2.145GHz W-CDMA 3-GPP BS-1 64ch Modulation Single-Carrier ACLR vs. Output Power VDS=28V IDS=630mA fo=2.1325GHz W-CDM...
Description S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET

File Size 306.31K  /  6 Page

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For 35dbm Found Datasheets File :: 319    Search Time::7.672ms    
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