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  47mh Datasheet PDF File

For 47mh Found Datasheets File :: 406    Search Time::2.109ms    
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    IRFB13N50A IRFB13N50APBF

IRF[International Rectifier]
Part No. IRFB13N50A IRFB13N50APBF
OCR Text ... VGS = 10V, ID = 8.4A 2.0 --- 4.0 V VDS = V GS, ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, TJ = 125C --...7mH, RG = 25, IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a) Pulse width 300s; duty cycle 2%. C...
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A)

File Size 95.33K  /  8 Page

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    IRFF9120 FN2287

Intersil, Corp.
Intersil Corporation
Part No. IRFF9120 FN2287
OCR Text ...AIN (CASE) SOURCE GATE 4-94 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedur...7mH, RG = 25, peak IAS = 4.0A. See Figures 15 and 16) Typical Performance Curves 1.2 POWER DISSI...
Description 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET 4 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
4A/ 100V/ 0.60 Ohm/ P-Channel Power MOSFET
From old datasheet system

File Size 59.32K  /  7 Page

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    IRFI520N

IRF[International Rectifier]
Part No. IRFI520N
OCR Text ... Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V G S RDS(on) = 0.20 ID = 7.6A Description Fifth Generation...7mH RG = 25, IAS = 5.7A. (See Figure 12) ISD 5.7A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=7.6A)

File Size 129.59K  /  8 Page

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    1800 18224 18106 18475 18472 18223 18335 18103 18104 18333 18334 18153 18682 18683 18684 18685 18473 18154 18155 18105 1

CANDD[C&D Technologies]
Part No. 1800 18224 18106 18475 18472 18223 18335 18103 18104 18333 18334 18153 18682 18683 18684 18685 18473 18154 18155 18105 18225 18254 18474
OCR Text ...255 335 465 630 1.0 1.5 2.2 3.5 4.6 7.0 12 A MAX 5.35 4.15 3.45 3.00 2.42 2.00 1.65 1.35 1.20 1.10 0.90 0.80 0.73 0.60 0.53 0.44 0.33 0.3...7mH 6.8mH 10mH FEATURES s Axial Format s Up to 5.35A IDC s 4.7H to 10mH s Low DC Resistance s Com...
Description GIGABASE 350 CAT5E PATCH 100 FT, SNAGLSS BL 25PAK 1 ELEMENT, 0.01 uH, GENERAL PURPOSE INDUCTOR
GIGABASE 350 CAT5E PATCH 50 FT, SNAGLSS BL 25PAK 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
CAT5E 350MHZ PATCH CABLE 7FT, SNAGLESS, BEIGE
CAT5E 350MHZ PATCH CABLE 15FT, SNAGLESS, BEIGE
GIGABASE 350 CAT5E PATCH 4 FT, SNAGLESS, RED
GIGABASE 350 CAT5E PATCH 2 FT, SNAGLESS, PINK
Connector assemblies, Network cables; Drop Ship:Yes
Connector assemblies, Network cables; Connector Type A:RJ45 Plug; Connector Type B:RJ45 Plug; Drop Ship:Yes
GBASE 350 C5E BGE STRANDED BLK 500FT
GBASE 350 C5E BGE STRNDED BLK 1000FT
ENHANCED PATCH CORD, BLUE50 FEET.
   Axial Lead Inductors

File Size 51.45K  /  2 Page

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    FQA17P10

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA17P10
OCR Text ...VDS = -40 V, ID = -9.0 A (Note 4) -2.0 --- -0.14 10 -4.0 0.19 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacita...7mH, IAS = -18A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -16.5A, di/dt 300A/s, VDD BVDSS, ...
Description 100V P-Channel MOSFET

File Size 674.16K  /  8 Page

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    FQAF17P10

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF17P10
OCR Text ... (Note 1) FQAF17P10 -100 -12.4 -8.8 -49.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Sour...7mH, IAS = -12.4A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -16.5A, di/dt 300A/s, VDD BVDSS...
Description 100V P-Channel MOSFET

File Size 665.09K  /  8 Page

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    FQPF7P06

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF7P06
OCR Text ...ipation (TC = 25C) 90 -5.3 2.4 -7.0 24 0.16 -55 to +175 300 - Derate above 25C Operating and Storage Temperature Range Maximum lead te...7mH, IAS = -5.3A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -7.0A, di/dt 300A/s, VDD BVDSS, ...
Description 60V P-Channel MOSFET

File Size 664.63K  /  8 Page

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    IRF9510 FN2214

Intersil Corporation
Part No. IRF9510 FN2214
OCR Text 4 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET [ /Title (IRF95 10) /Subject (.0A, 00V, .200 hm, -Chanel ower OSET) /Autho () /Keyords I...7mH, RG = 25, peak IAS = 3.0A. See Figures 15, 16. Typical Performance Curves 1.2 POWER DISSIPAT...
Description From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)

File Size 58.92K  /  7 Page

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    IRFP450N

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP450N
OCR Text ...S p-n junction diode. --- --- 1.4 V TJ = 25C, IS = 14A, VGS = 0V --- 430 650 ns TJ = 25C, IF = 14A --- 3.7 5.6 C di/dt = 100A/s Intrinsic ...7mH RG = 25, IAS = 14A. (See Figure 12) ISD 14A, di/dt 510A/s, VDD V(BR)DSS, TJ 150C Da...
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=500V, Rds(on)max=0.37ohm, Id=14A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.37ohm,身份证\u003d 14A条)

File Size 119.23K  /  8 Page

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    FQD10N20L FQU10N20L FQD10N20 FQD10N20LTF FQU10N20LTU FQD10N20LTM

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FQD10N20L FQU10N20L FQD10N20 FQD10N20LTF FQU10N20LTU FQD10N20LTM
OCR Text ... FQD10N20L / FQU10N20L 200 7.6 4.8 30.4 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source...7mH, IAS = 7.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/s, VDD BVDSS, Star...
Description 200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET

File Size 574.90K  /  9 Page

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