4mbit f-ram memory pdf Datasheet P6 Description --- IC-ON-LINE


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4mbit f-ram memory Datasheet PDF File

For 4mbit f-ram memory Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Spansion, Inc.
Part No.	AM29F400BT-120ED AM29F400BT-55ED AM29F400BB-55SD
Description	Flash memory IC; Leaded Process Compatible:Yes; memory Size:4mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 120 ns, PDSO48 Flash memory IC; Leaded Process Compatible:Yes; memory Size:4mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 Flash memory IC; Leaded Process Compatible:Yes; memory Size:4mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
File Size	584.10K / 43 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics N.V.
Part No.	M29F400T
Description	4mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash memory(4Mb闪速存储器) 4Mb12KB的x8256Kb的x16插槽，引导块）单电源闪存4Mb的闪速存储器
File Size	24.37K / 3 Page	View it Online	Download Datasheet

				FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
Part No.	MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PBS MB84VD22193EE MB84VD22193EE-90 MB84VD22193EE-90-PBS MB84VD22192EC-90-PBS MB84VD22181EE-90-PBS MB84VD22191EE-90-PBS MB84VD22182EC-90-PBS MB84VD22183EC-90-PBS MB84VD22184EC-90-PBS MB84VD22191EC-90-PBS MB84VD22181EC-90-PBS MB84VD22182EE-90-PBS MB84VD22183EE-90-PBS MB84VD22184EE-90-PBS MB84VD22194EC-90-PBS MB84VD22192EE-90 MB84VD22194EE-90 MB84VD22192EE-90-PBS MB84VD22194EE-90-PBS MB84VD22184EC-90 MB84VD22181EE-90
Description	32M (x 8/x16) FLASH memory & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪 32M (x 8/x16) FLASH memory & 4M (x 8/x16) STATIC RAM SPECIALTY memory CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH memory & 4M (x 8/x16) STATIC RAM
File Size	536.39K / 61 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10
Description	MCP (Multi-Chip Package) FLASH memory & SRAM 16M (x 8) FLASH memory & 2M (x 8) STATIC RAM (MB84VA2100 / MB84VA2101) 16M (x 8) FLASH memory & 2M (x 8) STATIC RAM
File Size	170.09K / 29 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SCT-L85 LHF04C01 LH28F004SCN-L120 LH28F004SCN-L150 LH28F004SCN-L85 LH28F004SCN-L90 LH28F004SCHB-L85
Description	4M (512K x 8) flash memory 4M Flash File memory 4mbit Flash File memory
File Size	4,080.18K / 48 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC M368L6523BUN-LB3 M381L6523BUM-LCC M381L6523BTM-LB3 M381L6523BTM-LCC M368L2923BTN-CB3 M381L2923BTM-LB3 M368L3324BTM-CB3 M368L2923BTN-LB3 M381L6523BTM-CB3 M368L3324BUM-CB3 M368L3324BTM-LB3 M368L6523BTN-CB3 M381L2923BTM-CB3 M381L2923BUM-CB3 M381L2923BUM-LB3 M381L6523BUM-CB3 M368L2923BUM-CCC M368L2923BUM-LCC M368L2923BTM-CCC M381L2923BTM-LCC M368L2923BTM-LCC M368L2923BUN-CB3 M368L6523BUN-CB3 M368L6523BUM-CCC M381L2923BUM-CCC M381L6523BTM-CCC
Description	64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash memory IC; memory Size:4mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash memory IC; memory Size:4mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
File Size	454.45K / 25 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc.
Part No.	EN71NS032A0 EN71NS032A0-9DCWP EN71NS032A0-7DCWP
Description	Stacked Multi-Chip Product (MCP) Flash memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
File Size	278.57K / 10 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc.
Part No.	EN71PL032A0-70CWP EN71PL032A01
Description	Stacked Multi-Chip Product (MCP) Flash memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
File Size	417.81K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd.
Part No.	DS75129J DS75129J/A
Description	2Mb Bytewide 3V f-ram memory 256Kb Bytewide 3V f-ram memory 线路接收
File Size	257.45K / 4 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc.
Part No.	EN71GL064B0 EN71GL064B0-70CWP
Description	Stacked Multi-Chip Product (MCP) Flash memory and RAM 64 Megabit (4M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
File Size	324.04K / 8 Page	View it Online	Download Datasheet

For 4mbit f-ram memory Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |