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  7.159 Datasheet PDF File

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    2SC5436

NEC
Part No. 2SC5436
OCR Text ...100 UNIT nA nA 70 0.4 9.0 7.0 8.5 6.0 14.0 12.0 10.0 9.0 1.4 1.4 130 0.8 pF GHz GHz dB dB 2.0 2.0 dB dB Notes 1. Pulse measureme...159.1 -166.4 -173.5 179.1 MAG 3.497 3.179 2.906 2.738 2.636 2.397 2.167 2.048 1.899 1.737 1.612 1.53...
Description NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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    NSF2250WT1-D

ON Semiconductor
Part No. NSF2250WT1-D
OCR Text ... e = 0 ma, f = 1.0 mhz c ob 0.7 1.2 pf collector to base time constant, v ce = 3 v, i e = 5.0 ma, f = 31.9 mhz c c r b'b 3.5 8.0 ps f...159.754 1.034 23.227 0.288 36.614 0.469 63.689 3000 0.239 144.224 0.995 14.088 0.340 34.458 0.413 74...
Description NPN Silicon Oscillator and Mixer Transistor

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    Mimix Broadband, Inc.
Part No. PB-CGB7011-SP-0000 PB-CGB7011-SC-0000
OCR Text ....4 dB Noise Figure @ 850 MHz 21.7 dB Gain @ 850 MHz 21.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature Low Cost: Die Form or...159.10 -161.60 -163.70 -166.50 -169.40 -171.60 -174.60 -177.70 179.50 176.60 173.70 170.10 167.20 16...
Description DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier

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    http://
NEC[NEC]
NEC Corp.
Part No. 2SC5436
OCR Text ...100 UNIT nA nA 70 0.4 9.0 7.0 8.5 6.0 14.0 12.0 10.0 9.0 1.4 1.4 130 0.8 pF GHz GHz dB dB 2.0 2.0 dB dB Notes 1. Pulse measureme...159.1 -166.4 -173.5 179.1 MAG 3.497 3.179 2.906 2.738 2.636 2.397 2.167 2.048 1.899 1.737 1.612 1.53...
Description NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体

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    ICS843004 ICS843004AG ICS843004AGT

ICST[Integrated Circuit Systems]
Part No. ICS843004 ICS843004AG ICS843004AGT
OCR Text ...A F_SEL0 VCC F_SEL1 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 nQ2 Q2 VCCO Q3 nQ3 VEE nc nXTAL_SEL TEST_CLK VEE XTAL_IN ...159.375MHz, (637KHz - 10MHz) 0.70 0.75 0.58 0.81 0.98 300 600 51 55 nPLL_SEL = 1 Minimum 186.67 140 ...
Description FEMTOCLOCKS LVCMOS/CRYSTAL-TO- 3.3V LVPECL FREQUENCY SYNTHESIZER
FEMTOCLOCKS⑩ LVCMOS/CRYSTAL-TO- 3.3V LVPECL FREQUENCY SYNTHESIZER

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    AM29LV400BB-90DTE1 AM29LV400BB-90DTI1 AM29LV400BT-120DPE1 AM29LV400BT-120DTC1 AM29LV400BT-120DTE1 AM29LV400BB-120DWC1 AM

ADVANCED MICRO DEVICES INC
http://
AMD[Advanced Micro Devices]
Part No. AM29LV400BB-90DTE1 AM29LV400BB-90DTI1 AM29LV400BT-120DPE1 AM29LV400BT-120DTC1 AM29LV400BT-120DTE1 AM29LV400BB-120DWC1 AM29LV400BB-80DPC1 AM29LV400BB-80DPE1 AM29LV400BB-80DTE1 AM29LV400BB-80DWC1 AM29LV400BB-90DPI1 AM29LV400BT-60RDTI1 AM29LV400BT-60RDWC1 AM29LV400BT-70DTI1 AM29LV400BT-70DWC1 AM29LV400BT-80DWE1 AM29LV400BB-120DPI1 AM29LV400BB-90DPC1 AM29LV400BB-90DPE1 AM29LV400BB-90DTC1 AM29LV400BB-90DWC1 AM29LV400BB-90DWE1 AM29LV400BB-90DWI1 AM29LV400BT-120DPC1 AM29LV400BT-120DPI1 AM29LV400BT-120DTI1 AM29LV400BT-120DWC1 AM29LV400BT-120DWE1 AM29LV400BT-120DWI1 AM29LV400BT-60RDPC1 AM29LV400BT-60RDPI1 AM29LV400BT-60RDTC1 AM29LV400BT-60RDWI1 AM29LV400BT-70DPC1 AM29LV400BT-70DPI1 AM29LV400BT-70DTC1 AM29LV400BT-70DWI1 AM29LV400BT-80DPC1 AM29LV400BT-80DPE1 AM29LV400BT-80DPI1 AM29LV400BT-80DTC1 AM29LV400BT-80DTE1 AM29LV400BT-80DTI1 AM29LV400BT-80DWC1 AM29LV400BT-80DWI1 AM29LV400BB-70DPC1 AM29LV400BB-70DPI1 AM29LV400BB-70DTC1 AM29LV400BB-70DTI1 AM29LV400BB-70DWC1 AM29LV400BB-70DWI1 AM29LV400BB-120DPC1 AM29LV400BB-120DPE1 AM29LV400BB-120DTC1 AM29LV400BB-120DTE1 AM29LV400BB-120DTI1 AM29LV400BB-120DWE1 AM29LV400BB-120DWI1 AM29LV400BT-90DPC1 AM29LV400BT-90DPE1 AM29LV400BT-90DPI1 AM29LV400BT-90DTC
OCR Text ...gle power supply operation -- 2.7 to 3.6 V for read, program, and erase operations -- Ideal for battery-powered applications Manufactured o...159.50 -55.00 -159.50 -49.60 -159.50 -43.80 -159.50 -38.40 -159.50 -32.50 -159.50 -27.10 -159.20 -21...
Description 256K X 16 FLASH 3V PROM, 80 ns, UUC43
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory

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    2SC5186-T1 2SC5186

NEC
Part No. 2SC5186-T1 2SC5186
OCR Text ...21e|2 |S21e|2 NF NF fT fT Cre 9 7 70 8.5 6.0 10 7.5 1.3 1.3 11 9 0.4 0.8 2.0 2.0 MIN. TYP. MAX. 100 100 140 dB dB dB dB GHz GHz pF UNIT nA n...159.6 148.9 139.9 MAG 8.638 6.657 5.505 4.774 4.093 3.633 3.334 2.967 2.638 S21 ANG 99.5 90.0 81.9 7...
Description NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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    NEC[NEC]
Part No. 2SC4226 2SC4226-T2R23-A
OCR Text ...P. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * High Gain |S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * Small Mini Mold Package EIAJ: SC-7...159.6 155.5 151.6 147.9 144.3 140.9 137.5 134.4 MAG 11.858 10.093 8.219 6.684 5.565 4.737 4.134 3.65...
Description UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

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    TGA8344-SCC

TriQuint Semiconductor
Part No. TGA8344-SCC
OCR Text ... - 14 GHz 16 - 18 GHz 14 13 12 -7.7 -7.7 5.7 7 MAX dB dBm dBm dB dB dB dB VALUE UNITS 2/ 2/ 2/ 1/ 2/ VG2 (approximately 1.5V) is p...159 155 141 131 112 103 89 74 84 109 155 153 -174 -178 166 155 143 127 119 97 78 -93 -96 -94 -90 -12...
Description 2 - 18 GHz Low Noise Amplifier

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    INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1

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HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186 INA-02186-BLK INA-02186-TR1
OCR Text ...x. 29.0 31.0 2.0 0.8 39 1.5 1.7 2.0 11 23 330 4.0 5.5 +10 7.0 4.0 29.0 31.0 2.0 0.8 39 2.0 1.7 2.0 11 23 350 5.5 +10 7.0 Notes: 1. The...159 -161 -168 -175 179 166 159 159 163 168 168 165 159 150 143 133 31.9 31.9 31.8 31.7 31.4 31.2 ...
Description GT 10C 10#16 PIN PLUG 低噪声,可级联硅双极MMIC放大
GT 10C 10#16 SKT PLUG
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

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