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WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
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| Part No. |
EDI7P009FLC0101C15 EDI7P009FLC0100C15
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| OCR Text |
...rds the memory will wrap at the 8mb boundary, for 9mb and 10mb cards the memory will wrap at the 16mb boundary. 54.0mm 0.10 (2.126) 10.0...4mb(2.3) 51 v cc supply voltage 52 v pp 2 prog. voltage nc 53 a22 i address bit 22 8mb(2,3) 54 a23 i... |
| Description |
4.5M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
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| File Size |
188.61K /
12 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L128L32D1F-5
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| OCR Text |
...reserved for address expansion, 8mb and 16mb respectively. tqfp pin assignment table pin # x18 x32/x36 1 nc nc/ dqpc * 2nc dqc 3nc dqc 4v dd...4mb: 256k x 18, 128k x 32/36 3.3v i/o pipelined, dcd syncburst sram micron technology, inc., reserve... |
| Description |
128K X 32 STANDARD SRAM, 2.8 ns, PBGA165
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| File Size |
429.23K /
25 Page |
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ELECTRONIC DESIGNS INC
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| Part No. |
EDI7P009FLC0100I15
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| OCR Text |
...rds the memory will wrap at the 8mb boundary, for 9mb and 10mb cards the memory will wrap at the 16mb boundary. mechanical 54.0mm 0....4mb(2,3) 17 vcc supply voltage 51 vcc supply voltage 18 vpp1 prog. voltage n.c. 52 vpp2 prog. voltag... |
| Description |
9M X 8 FLASH 5V PROM CARD, 150 ns, XMA68
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| File Size |
110.74K /
11 Page |
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it Online |
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WHITE ELECTRONIC DESIGNS CORP
MICROSEMI CORP-PMG MICROELECTRONICS
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| Part No. |
7P512FLG0802C15 7P002FLG0400C15 7P002FLG0401C15 G1601C15
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| OCR Text |
...oltage 53 a 22 i address bit 22 8mb(2,3) 54 a 23 i address bit 23 n.c. 55 a 24 i address bit 24 n.c. 56 a 25 i address bit 25 n.c. 57 vs 2 o...4mb a21 is msb a22 - a25 are nc). 3. for the 3mb card the memory will wrap at the 4mb boundary, fo... |
| Description |
256K X 16 FLASH 12V PROM CARD, 150 ns, XMA68
1M X 16 FLASH 12V PROM CARD, 150 ns, XMA68
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| File Size |
345.37K /
11 Page |
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CYPRESS SEMICONDUCTOR CORP
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| Part No. |
MT58L256V18F1B-10
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| OCR Text |
...reserved for address expansion, 8mb and 16mb respectively. 76 v ss 77 v dd q 78 nc dqb 79 nc dqb 80 sa nc/ dqpb * 81 sa 82 sa 83 adv# 84 ads...4mb syncburst srams integrate a 256k x 18, 128k x 32, or 128k x 36 sram core with advanced synchrono... |
| Description |
256K X 18 STANDARD SRAM, 10 ns, PBGA119
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| File Size |
342.19K /
31 Page |
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it Online |
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Sony
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| Part No. |
CXK77B1840AGB CXK77B3640AGB
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| OCR Text |
...fined as an SA address input in 8mb and 16Mb LW SRAMs. 3. Pad Location 2B is a true no-connect. However, it is defined as an SA address input in 16Mb LW SRAMs.
4mb, Sync LW, HSTL, rev 1.5
2 / 33
July 23, 1998
SONY(R)
CXK77B36... |
| Description |
4mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
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| File Size |
283.45K /
33 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MTCF032A MTCF004A MTCF016A MTCF010A MTCF008A
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| OCR Text |
...te ? available densities C 4mb, 8mb, 10mb, 16mb, 32mb ? 3.3v or 5v supply voltage ? customer-specific labeling; contact factory for details compactflash ? card compactflash card general description the micron ? compactflash card is a small... |
| Description |
32Mb CompactFlash Card(32Mb闪速存储器
4mb CompactFlash Card(4mb闪速存储器
16Mb CompactFlash Card(16Mb闪速存储器
8mb CompactFlash Card(8mb闪速存储器
10Mb CompactFlash Card(10Mb闪速存储器 10MB的CompactFlash卡（10Mb闪速存储器卡）
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| File Size |
62.25K /
4 Page |
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Sony, Corp.
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| Part No. |
CXK77B1841AGB CXK77B3641AGB
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| OCR Text |
...fined as an sa address input in 8mb and 16mb lw srams. 3. pad location 2b is a true no-connect. however, it is defined as an sa address inpu...4mb, sync lw, lvttl, rev 1.2 3 / 28 september 24, 1998 sony ? cxk77b3641agb / cxk77b1841agb prelimi... |
| Description |
4mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
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| File Size |
227.24K /
28 Page |
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it Online |
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