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9.55 Datasheet PDF File

For 9.55 Found Datasheets File :: 225501 Search Time::1.953ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7614-55
OCR Text	...m 30 VGS/V = 25 6 6.5 7 20 8 15 9 10 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V BUK959-60 2.5 ...55 60 65 70 75 80 85 90 95 100 ID/A 0.5 -100 -50 0 50 Tmb / degC 100 150 200 ...
Description	TrenchMOS transistor Standard level FET
File Size	68.12K / 8 Page	View it Online	Download Datasheet

				NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
Part No.	BUK7618-55 NXPSEMICONDUCTORS-BUK7618-55118
OCR Text	...lised to 25degC 25 2 7 8 9 10 20 1.5 15 1 10 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 ID/A 0.5 -100 -50 0 50 Tmb / degC 100 150 200 Fig.6. Typical on-state resistance, Tj = 2...
Description	TrenchMOS transistor Standard level FET
File Size	67.43K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7620-55
OCR Text	... BUK7620-55 100 16 10 9 8.5 30 VGS/V = 8.0 7.5 ID/A 80 gfs/S 25 20 60 7.0 15 6.5 40 6.0 20 10 5.5 5.0 4.5 10 4.0 5 0 0 0 2 4 VDS/V 6 8 0 20 40 ID/A 60...
Description	TrenchMOS transistor Standard level FET TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
File Size	67.19K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7628-55
OCR Text	... 14 12 20 VGS/V = 10.0 9.5 9.0 8.5 gfs/S 15 60 8.0 10 7.5 40 7.0 6.5 20 6.0 0 5.5 5.0 4.5 10 0 0 10 20 30 40 50 60 70 ...55 1E-01 Sub-Threshold Conduction 100 IF/A 80 1E-02 2% typ 98% 60 Tj/C = 40 175 25 1...
Description	TrenchMOS transistor Standard level FET
File Size	67.96K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7635-55
OCR Text	... 16 14 12 16 VGS/V = 10.0 9.5 9.0 gfs/S 14 12 10 8 6 4 2 60 8.5 8.0 7.5 40 7.0 6.5 20 6.0 5.5 5.0 4.5 10 4.0 ...55 6.5 50 45 40 35 30 25 0 10 20 30 ID/A 40 50 60 70 Fig.8. Typical transconductance, Tj = 25 C. ...
Description	TrenchMOS transistor Standard level FET
File Size	67.84K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7675-55
OCR Text	...MIN. - 55 MAX. 55 55 16 19.7 13.9 79 61 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV THERMAL RESIS...
Description	TrenchMOS transistor Standard level FET
File Size	51.46K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUK7880-55
OCR Text	... 1 MHz MIN. 1 TYP. 4 365 110 60 9 15 18 12 MAX. 500 135 85 14 25 27 18 UNIT S pF pF pF ns ns ns ns VDD = 30 V; ID = 7 A; VGS = 10 V; RG =...55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain...
Description	TrenchMOS transistor Standard level FET
File Size	65.90K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9508-55
OCR Text	...rameter VGS 100 ID/A 80 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(T...55 1E-01 Sub-Threshold Conduction 100 IF/A 80 1E-02 2% typ 98% 60 Tj/C = 40 175 25 1...
Description	TrenchMOS transistor Logic level FET
File Size	64.04K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUK9514-55
OCR Text	... parameter VGS 100 ID/A Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(T...55 1E-01 Sub-Threshold Conduction 100 IF/A 80 1E-02 2% typ 98% 60 1E-03 40 1E-...
Description	Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk TrenchMOS transistor Logic level FET
File Size	48.66K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9518-55
OCR Text	...rameter VGS 100 ID/A 80 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(T...55 1E-01 Sub-Threshold Conduction 100 IF/A 80 1E-02 2% typ 98% 1E-03 60 1E-04 ...
Description	TrenchMOS transistor Logic level FET
File Size	64.16K / 8 Page	View it Online	Download Datasheet

For 9.55 Found Datasheets File :: 225501 Search Time::1.953ms
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