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For automati Found Datasheets File :: 497 Search Time::1.313ms
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				Microchip Technology Inc.
Part No.	SST32HF164-90-4C-LBK SST32HF164-90-4C-LBKE SST32HF162-70-4C-LBK SST32HF164-70-4C-LBK SST32HF162-70-4C-LBKE SST32HF162-70-4E-LBK SST32HF164-70-4E-LBK SST32HF164-90-4E-LBK SST32HF162-70-4E-LBKE SST32HF164-70-4E-LBKE SST32HF164-70-4C-LBKE
OCR Text	...se and prog ram operations will automati- cally latch the input address and data signals and complete the operation in background without further input stimulus requirement. once the internally controlled erase or pro- gram cycle in the fla...
Description
File Size	317.98K / 25 Page	View it Online	Download Datasheet

				Atmel
Part No.	AT49BV162A AT49BV162AT
OCR Text	...ycle operation. the device will automati- cally generate the required internal program pulses. 5 at49bv162a(t) [preliminary] 3349d?flash?3/04 any commands written to the chip during the embedded programming cycle will be ignored. if a ha...
Description	16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Bottom Boot 16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Top Boot
File Size	208.89K / 29 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF
OCR Text	...sor is implanted, it enables to automati- cally adjust refresh rate according to temperature without external emrs command . a burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted ...
Description	Mobile SDR - 64Mb
File Size	316.26K / 27 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K8P5516UZB
OCR Text	...s asserted as v hh , the device automati- cally enters the unlock bypass mode, and reduces the program oper- ation time. " - 64fbga package demension is revised. - ordering information is revised. july 04,2008 target - 1.0 - deleted speed ...
Description	256Mb B-die NOR FLASH
File Size	593.62K / 59 Page	View it Online	Download Datasheet

				Sharp Electrionic Components
Part No.	LH28F008SC
OCR Text	... and v pp detection circuitry automati- cally configures the device for optimized read and write operations. a command user interface (cui) serves as the in- terface between the system processor and internal op- eration of the device. a v...
Description	8M (1M × 8) Flash Memory
File Size	357.50K / 38 Page	View it Online	Download Datasheet

				Xilinx, Inc. XILINX INC
Part No.	XC9536XL-1 XC9536XL-5 XC9536XL-7 XC9536XL-10VQ64I XC9536XL-7PC44C XC9536XL-10PC44I XC9536XL-5VQ44C XC9536XL-10VQ64C XC9536XL-10VQ44C XC9536XL-5VQ64C XC9536XL-5PC44C XC9536XL-5CS48C XC9536XL-5CS48I XC9536XL XC9536XL-10CS48C XC9536XL-10CS48I XC9536XL-4PC44C XC9536XL-10PC44C XC9536XL-10VQ44I XC9536XL-4CS48C XC9536XL-4CS48I XC9536XL-4PC44I XC9536XL-4VQ44C XC9536XL-4VQ44I XC9536XL-4VQ64C XC9536XL-4VQ64I XC9536XL-5PC44I XC9536XL-5VQ44I XC9536XL-5VQ64I XC9536XL-7CS48C XC9536XL-7CS48I XC9536XL-7PC44I XC9536XL-7VQ44C XC9536XL-7VQ44I
OCR Text	...roduct-terms and macrocells are automati cally deactivated by the software to further conserve power. For a general estimate of ICC, the following equation may be used: ICC (mA) = MCHP(0.5) + MCLP(0.3) + MC(0.0045 mA/MHz) f Where: MCHP = Ma...
Description	XC9536XL High PerformanceCPLD DC-DC Converter; Supply Voltage:3.65V; Output Voltage:2.5V; Number of Outputs:1; Power Rating:15W; Mounting Type:PC Board; Efficiency:94%; Leaded Process Compatible:No; Output Current:6A; Peak Reflow Compatible (260 C):No T1/E1 Transformer FLASH PLD, 10 ns, PQFP44 XC9536XL High PerformanceCPLD FLASH PLD, 10 ns, PQFP64 XC9536XL High PerformanceCPLD FLASH PLD, 4 ns, PQFP64 XC9536XL High PerformanceCPLD FLASH PLD, 4 ns, PQCC44 XC9536XL High PerformanceCPLD FLASH PLD, 10 ns, PBGA48 XC9536XL High PerformanceCPLD FLASH PLD, 10 ns, PQCC44 XC9536XL High PerformanceCPLD FLASH PLD, 7.5 ns, PQCC44
File Size	91.39K / 7 Page	View it Online	Download Datasheet

				Advanced Micro Devices, Inc.
Part No.	AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90DPI AM29LV200BB-90DTC AM29LV200BB-70DRI AM29LV200BB-90DFC AM29LV200BB-70DPC AM29LV200BB-70DPI AM29LV200BB-70DTC AM29LV200BB-70DWC AM29LV200BB-90DFI AM29LV200BB-90DRC AM29LV200BB-70DRC AM29LV200BB-90DPC AM29LV200BB-90DRI AM29LV200BB-90DWC AM29LV200BB-70DFI AM29LV200BB-90DTI AM29LV200BB-70DTI AM29LV200BB35DTI1 AM29LV200BT35DTI1 AM29LV200BB-120DRI AM29LV200BB-60RDRI AM29LV200BB-120DRC AM29LV200BB-60RDTC AM29LV200BT-120DRI AM29LV200BT-120DRC AM29LV200BB-60RDPI AM29LV200BB-60RDWC AM29LV200BB-60RDTI AM29LV200BB-120DTI AM29LV200BT-120DTI AM29LV200BB-60RDFI AM29LV200BT-120DWI AM29LV200BB-120DTC AM29LV200BB-120DWI AM29LV200BB-60RDWI AM29LV200BT-120DTC AM29LV200BB-60RDRC AM29LV200BB-60RDFC AM29LV200BT-70DWI AM29LV200BB-90DWI AM29LV200BT-60RDWI AM29LV200BB-60RDPC AM29LV200BB-70RDFE AM29LV200BT-60RDTC AM29LV200BT-60RDFC AM29LV200BT-60RDPC AM29LV200BT-60RDPI AM29LV200BT-60RDRC AM29LV200BT-60RDRI AM29LV200BT-60RDFI AM29LV200BB-120DFC AM29LV200BB-120DPC AM29LV200BB-120DFI AM29LV200BB-120DPI AM29LV200BB30DTI1 AM29LV200BB30DFI1 AM29LV200BB30DPI1 AM29LV200BB35DFI1 AM29LV200BB35DPI1 AM29LV200BB35DWI1 AM29LV200BB50DWI1 AM29LV200BB30DWI1 AM29LV200BB50DR
OCR Text	...ithm?an internal algorithm that automati- cally preprograms the array (if it is not already pro- grammed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell mar...
Description	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区快闪记忆体，修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位）3.0伏的CMOS只，引导扇区快闪记忆体，修编模具1
File Size	189.60K / 11 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28W320CB100N6T M28W320CB100N1T M28W320CT100GB1T M28W320CT85N6T M28W320CB85GB1T M28W320CB85GB6T M28W320CB100ZB6T M28W320CB70N6T M28W320CB70ZB6T M28W320CB85N6T M28W320CB85ZB1T M28W320CB70ZB1T
OCR Text	...ogram/erase controller (p/e.c.) automati- cally executes the algorithms taking care of the timings necessary for program and erase opera- tions. verification is performed too, unburdening the microcontroller, while the status register track...
Description	32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
File Size	282.43K / 42 Page	View it Online	Download Datasheet

For automati Found Datasheets File :: 497 Search Time::1.313ms
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