bipolar junction transistor pdf Datasheet P6 Description --- IC-ON-LINE


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bipolar junction transistor Datasheet PDF File

For bipolar junction transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier
Part No.	IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15
Description	INSULATED GATE bipolar transistor INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	329.22K / 11 Page	View it Online	Download Datasheet

				Central Semiconductor Corp
Part No.	CZT122 CZT127
Description	SMD bipolar Power transistor PNP Darlington SMD bipolar Power transistor NPN Darlington SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON transistor
File Size	71.12K / 2 Page	View it Online	Download Datasheet

				ROHM[Rohm] Rohm CO.,LTD.
Part No.	2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR
Description	transistor \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| SPAK 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset transistors > Medium Power bipolar transistors(0.5W-1.0W) transistors > Small Signal bipolar transistors(up to 0.6W) Low Vce(sat) transistor (-20V, -3A) From old datasheet system Low VCE(sat) transistor(低VCE(sat)晶体 Low Vce(sat) transistor (-20V/ -3A)
File Size	99.96K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC29K IRG4BC30K IRG4BC30
Description	600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
File Size	135.84K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH40K
Description	1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	154.31K / 8 Page	View it Online	Download Datasheet

				MDE Semiconductor
Part No.	P4KE350
Description	284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
File Size	841.97K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	BUL146FG BUL146G
Description	bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER transistor, TO-220AB SWITCHMODE NPN bipolar Power transistor
File Size	218.29K / 11 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1
Description	TERM BLOCK HDR 5.08MM 3POS PCB Low Current/ High Performance NPN Silicon bipolar transistor Low Current High Performance NPN Silicon bipolar transistor Low Current, High Performance NPN Silicon bipolar transistor
File Size	121.09K / 10 Page	View it Online	Download Datasheet

				UTC ROHM[Rohm]
Part No.	2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description	-3A / -12V bipolar transistor -2A / -30V bipolar transistor High-gain Amplifier transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier transistor (120V, 50mA) High-Frequency Amplifier transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier transistor (32V , 0.3A) Medium Power transistor (32V, 1A) Power transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
File Size	93.04K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT30SM-12 CT30SM-1
Description	MITSUBISHI INSULATED GATE bipolar transistor GENERAL INVERTER UPS USE Integrated Gate bipolar transistor (IGBT) Modules: 250V GENERAL INVERTER . UPS USE
File Size	35.85K / 3 Page	View it Online	Download Datasheet

For bipolar junction transistor Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |