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Osram Opto Semiconductors GmbH
OSRAM[OSRAM GmbH]
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| Part No. |
F2000D
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| OCR Text |
... bondpaddurchmesser Diameter of bondpad Weitere Informationen Additional information2) Vorderseitenmetallisierung Metallization frontside Ruckseitenmetallisierung Metallization backside Trennverfahren Dicing Verbindung Chip - Trager Die bon... |
| Description |
InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
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| File Size |
211.09K /
6 Page |
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it Online |
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MA-Com
MACOM[Tyco Electronics]
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| Part No. |
MASW8000
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| OCR Text |
...36 x 0.010 (1.15 x 0.90 x 0.25) bondpad Dimensions Inches (mm) RF: 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.004 x 0.004 (0.100 x 0.100) 0.005 x 0.009 (0.110 x 0.225)
RF1, RF2:
A1, A2,... |
| Description |
DC-8 GHz GaAs SPDT switch
GaAs SPDT Switch DC - 8 GHz
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| File Size |
84.44K /
2 Page |
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it Online |
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Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX1287EKA
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 90 x 45 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.6 microns (as drawn) 0.6 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
89.76K /
8 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX1555EZK
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 59 X 40 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) TiW/ AlCu/ TiWN None .8 microns (as drawn) .8 microns (as drawn) 5 mil. Sq. Si... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
90.83K /
8 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX1735EUK
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 55 x 42 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 1.2 microns (as drawn) 1.2 microns (as drawn) 5 mil... |
| Description |
PLASTIC ENCAPSULATED DEVICES
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| File Size |
55.55K /
8 Page |
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it Online |
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MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX2055EUP
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 125 x 79 mils Si3N4 (Silicon nitride) Au None Metal1: 1.2; Metal2: 1.2; Metal3: 1.2; Metal4: 5.6 microns (as drawn) Metal1: 1.6; Metal2: ... |
| Description |
RELIABILITY REPORT FOR MAX2055EUP PLASTIC ENCAPSULATED DEVICES
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| File Size |
124.22K /
8 Page |
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it Online |
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Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
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| Part No. |
MAX2391EGI
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| OCR Text |
...h: F. Minimum Metal Spacing: G. bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 120 x 98 mils Si3N4 (Silicon nitride) Au None 1.2 microns (as drawn) Metal 1, 2 & 3 5.6 microns (as drawn) Metal 4 1.6 microns (as drawn)... |
| Description |
PLASTIC ENCAPSULATED DEVICES 塑封器件
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| File Size |
109.87K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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