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				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	... refresh -- RAS-only refresh -- cas-before-RAS refresh -- Hidden refresh HM514400B/BL, HM514400C/CL Series Ordering Information Type No. HM514400BS-6 HM514400BS-7 HM514400BS-8 HM514400BLS-6 HM514400BLS-7 HM514400BLS-8 HM514400CS-6 HM51...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	... * Fast Page Mode operation * 2 cas Byte/Word Read/Write operation * cas-before-RAS refresh capability * RAS-only and Hidden refresh capability * Self-refresh capability (L-ver only) * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Ear...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...family. All of this family have cas-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consump...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...family. All of this family have cas-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consump...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...family. All of this family have cas-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption a...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory ... Elite Semiconductor Memory Technology Inc. N.A. ETC Electronic Theatre Controls, Inc.
Part No.	M11B416256A M11B416256A-25J M11B416256A-25T M11B416256A-28J M11B416256A-28T M11B416256A-30J M11B416256A-30T M11B416256A-35J M11B416256A-35T M11B416256A-40J M11B416256A-40T M11B416256
OCR Text	cas Byte/Word Read/Write operation Single 5V ( 10%) power supply TTL-compatible inputs and outputs 512-cycle refresh in 8ms Refresh modes : RAS only, cas BEFORE RAS (CBR) and HIDDEN JEDEC standard pinout Key AC Parameter tRAC -25 -28 -30 -...
Description	256 K x 16 DRAM EDO PAGE MODE
File Size	371.74K / 15 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc. ETC
Part No.	M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L16161A-5T M12L16161A-6T M12L16161A-7T M12L16161A-8T
OCR Text	...mance CMOS technology. Synchro- cas Latency (2 & 3 ) nous design allows precise cycle control with the - Burst Length (1, 2, 4, 8 & full page) use of system clock I/O transactions are possible - Burst Type (Sequential & Interleave) on every...
Description	512K x 16Bit x 2Banks Synchronous DRAM
File Size	564.61K / 27 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S M5M44800CTP-6 M5M44800CTP-6S M5M44800CTP-7 M5M44800CTP-7S M5M44800TP-7S M5M44800TP-6S M5M44800TP-5S M5M44800TP-7 M5M44800TP-6 M5M44800TP-5 M5M44800CJSERIES
OCR Text	... 27 DQ8 26 DQ7 25 DQ6 24 DQ5 23 cas 22 OE 21 NC 20 A8 19 A7 18 A6 17 A5 16 A4 15 VSS(0V) FEATURES Type name M5M44800CXX-5,-5S M5M44800CXX-6,-6S M5M44800CXX-7,-7S RAS cas Address OE Cycle Power access access access access time dissip...
Description	FAST PAGE MODE 4194304-BIT (524288-WORD 8-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (524288-WORD BYBY 8-BIT) DYNAMIC RAM FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
File Size	201.22K / 21 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP
OCR Text	...ery clock cycle - Programmable /cas Latency (LVTTL: 2 and 3) - Programmable Burst Length (1/2/4/8 and Full Page) - Programmable Burst Type (Sequential / Interleave) - Byte control using DQM0 - DQM3 signals in both read and write cycles - Pe...
Description	From old datasheet system 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
File Size	165.49K / 33 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	M5M4V4405CJ M5M4V4405CTP-6 M5M4V4405CTP-6S M5M4V4405CTP-7 M5M4V4405CTP-7S M5M4V4405TP-7S M5M4V4405TP-6S M5M4V4405TP-7 M5M4V4405TP-6 M5M4V4405CJ-6 M5M4V4405CJ-6S M5M4V4405CJ-7 M5M4V4405CJ-7S M5M4V4405CJSERIES
OCR Text	...A9 5 26 VSS 25 DQ4 24 DQ3 23 cas 22 OE FEATURES Type name M5M4V4405CXX-6, -6S M5M4V4405CXX-7, -7S A0 9 RAS cas Address OE Cycle Power dissipaaccess access access access tion time time time time time (max.ns) (max.ns) (max.ns) (ma...
Description	EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC EDO (HYPER PAGE MODE) 4194304-BIT (1048576-WORD BY 4-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
File Size	291.91K / 27 Page	View it Online	Download Datasheet

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