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Central Semiconductor, Corp.
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Part No. |
FP1189-PCB2140S
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OCR Text |
...is measured with v gs = 0 v, v ds = 3 v. 2. pinch - off voltage is measured when i ds = 1.2 ma. 3. test conditions unless ...109.58 0.040 34.30 0.447 - 60.96 1500 0.8 48 - 109.61 7.028 99.15 0.044 26.69 ... |
Description |
1/2 - Watt HFET 1 / 2 -瓦特异质结场效应晶体
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File Size |
507.31K /
12 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
WFP3205T
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OCR Text |
...et mosfet features 109a,60v, r ds(on) (max 8m ? )@v gs =10v ultra-low gate charge(typical 50nc) fast switching capability 100%avalanche ...109 a continuous drain current(@tc=100 ) 80 a i dm drain current pulsed (note1) 390 a v gs gate to ... |
Description |
Silicon N-Channel MOSFET
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File Size |
1,084.69K /
7 Page |
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it Online |
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WJ Communications
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Part No. |
FP1189
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OCR Text |
...is measured with v gs = 0 v, v ds = 3 v. 2. pinch-off voltage is measured when i ds = 1.2 ma. 3. the junction temperature ensures a...109.58 0.040 34.30 0.447 -60.96 1500 0.848 -109.61 7.028 99.15 0.044 26.69 0.428 -70.64 17... |
Description |
HFET
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File Size |
566.57K /
10 Page |
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Excelics Semiconductor
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Part No. |
EIC6472-5
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OCR Text |
...mpression f = 6.40-7.20ghz v ds = 10 v, i dsq 1600ma 36.5 37.5 dbm g 1db gain at 1db compression f = 6.40-7.2...109.27 0.11 -163.54 0.3912 31.35 7.0 0.1825 36.84 3.2432 -140.81 0.1125 165.5 0.3476 -5.91... |
Description |
Internally Matched Power FET
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File Size |
186.35K /
4 Page |
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it Online |
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Price and Availability
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