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SiliconTech, Inc. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
E-STLC2416 STLC2416
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OCR Text |
...ware support - Low level (up to hci) stack or embedded stack with profiles - Support of UART and USB hci transport layers.
1.1 Applications Features Typical applications in which the STLC2416 can be used are: Cable replacem... |
Description |
BLUETOOTH (TM) BASEBAND WITH INTEGRATED FLASH A free-form text description of the package type. BLUETOOTH BASEBAND WITH INTEGRATED FLASH BLUETOOTH BASEBAND WITH INTEGRATED FLASH
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File Size |
195.69K /
27 Page |
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http:// INFINEON[Infineon Technologies AG]
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Part No. |
PTF211802A PTF211802E PTF211802
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OCR Text |
...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
Two-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35 -... |
Description |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
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File Size |
165.14K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
PTF080601F PTF080601E PTF080601A PTF080601
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OCR Text |
...Excellent thermal stability Low hci drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
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Modulation Spectrum (dB)
-30 -40 -50 -60 -70 -80 -90
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Efficiency (%)
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PTF080601A Package 20248 PTF080601E Pack... |
Description |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
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File Size |
293.07K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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