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igbt mos Datasheet PDF File

For igbt mos Found Datasheets File :: 1241 Search Time::8ms
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				Fairchild Semiconductor
Part No.	HGTG30N60A4
OCR Text	igbt The HGTG30N60A4 is a mos gated high voltage switching device combining the best features of mosFETs and bipolar transistors. This device has the high input impedance of a mosFET and the low on-state conduction loss of a bipolar transi...
Description	600V, SMPS Series N-Channel igbt
File Size	137.91K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
Part No.	HGTG30N60B3D HGT4E30N60B3DS
OCR Text	igbt with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are mos gated high voltage switching devices combining the best features of mosFETs and bipolar transistors. These devices have the high input impedance of a mosF...
Description	60A/ 600V/ UFS Series N-Channel igbt 60A 600V UFS Series N-Channel igbt 60A, 600V, UFS Series N-Channel igbt 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL igbt, TO-268AA
File Size	174.29K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTG30N60B3
OCR Text	igbt The HGTG30N60B3 is a mos gated high voltage switching device combining the best features of mosFETs and bipolar transistors. This device has the high input impedance of a mosFET and the low on-state conduction loss of a bipolar transi...
Description	60A, 600V, UFS Series N-Channel igbt
File Size	181.39K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGTG30N60C3D FN4041
OCR Text	igbt with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a mos gated high voltage switching device combining the best features of mosFETs and bipolar transistors. The device has the high input impedance of a mosFET and the low on-state...
Description	63A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL igbt, TO-247 From old datasheet system
File Size	115.87K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG30N60C3 FN4042
OCR Text	igbt The HGTG30N60C3 is a mos gated high voltage switching device combining the best features of mosFETs and bipolar transistors. The device has the high input impedance of a mosFET and the low on-state conduction loss of a bipolar transis...
Description	From old datasheet system 63A, 600V, UFS Series N-Channel igbt
File Size	98.55K / 6 Page	View it Online	Download Datasheet

				Intersil, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG40N60A4 HGTG40N60A4NL
OCR Text	igbt The HGTG40N60A4 is a mos gated high voltage switching device combining the best features of a mosFET and a bipolar transistor. This device has the high input impedance of a mosFET and the low on-state conduction loss of a bipolar tran...
Description	600V, SMPS Series N-Channel igbt 75 A, 600 V, N-CHANNEL igbt, TO-247
File Size	134.28K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGTG40N60B3
OCR Text	igbt Description The HGTG40N60B3 is a mos gated high voltage switching device combining the best features of mosFETs and bipolar transistors. The device has the high input impedance of a mosFET and the low on-state conduction loss of a bi...
Description	70A, 600V, UFS Series N-Channel igbt
File Size	90.08K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG40N60C3 FN4472
OCR Text	igbt The HGTG40N60C3 is a mos gated high voltage switching device combining the best features of a mosFET and a bipolar transistor. These devices have the high input impedance of a mosFET and the low on-state conduction loss of a bipolar t...
Description	75A/ 600V/ UFS Series N-Channel igbt 75A, 600V, UFS Series N-Channel igbt From old datasheet system
File Size	78.15K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	L6384 L6384D
OCR Text	...to drive N Channel Power mos or igbt. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are Cmos/TTL compatible for ease of interfacing with controlling devices. Matched delays between Lower and ...
Description	HIGH-VOLTAGE HALF BRIDGE DRIVER
File Size	77.03K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS3810
OCR Text	...2 - DRAIN 3 - S OURCE 4 - DRAIN igbt 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification St...
Description	Power mosFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A? Power mosFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A) Power mosFET(Vdss=100V Rds(on)=0.009ohm Id=170A) Power mosFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)
File Size	122.48K / 8 Page	View it Online	Download Datasheet

For igbt mos Found Datasheets File :: 1241 Search Time::8ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |