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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN4150 IRHN8150 JANSG2N7268U JANSR2N7268U
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310)... |
| Description |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
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| File Size |
283.27K /
12 Page |
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it Online |
Download Datasheet
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International Rectifier
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| Part No. |
IRHN7230 IRHN7230PBF IRHN7230-15 IRHN8230
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 2... |
| Description |
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
Simple Drive Requirements
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| File Size |
440.35K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM4250 IRHM7250 IRHM8250 IRHM3250 JANSR2N7269
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA
.12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A 13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B 1.27 ( .050 ) 1.02... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
272.45K /
13 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA7260 IRHNA8260
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| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
128.84K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM7064 IRHM8064
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| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-r... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
91.42K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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