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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP7612P70
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| OCR Text |
...As) pseudomorphic High Electron mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances... |
| Description |
PACKAGED HIGH DYNAMIC RANGE PHEMT
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| File Size |
60.15K /
3 Page |
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it Online |
Download Datasheet
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LP7612
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| OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit... |
| Description |
HIGH DYNAMIC RANGE PHEMT
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| File Size |
38.11K /
2 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF4319 MGF4319G 431XG MGF4316 MGF4316G MGF431XG MGF431XGSERIES
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| OCR Text |
...er-low-noise HEMT(High Electron mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
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| Description |
Super Low Noise InGaAs HEMT
From old datasheet system
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| File Size |
32.55K /
3 Page |
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it Online |
Download Datasheet |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FHC40LG
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| OCR Text |
...FH40LG is a Super High Electron mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetica... |
| Description |
Super Low Noise HEMT
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| File Size |
82.08K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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