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AP409 72V32 P3NB60FP 111D191B LM2S1H 3412JIT BTS640S2 24GR5D
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  rac Datasheet PDF File

For rac Found Datasheets File :: 1525    Search Time::1.11ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364005CSWG
OCR Text ...tures performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 c...
Description 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

File Size 417.45K  /  21 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364005BSWG
OCR Text ...tures performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 c...
Description 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

File Size 389.50K  /  19 Page

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    Atmel
Part No. U4092B
OCR Text ...DO - + 24 34 RECO MUTX 37 36 GR rac 35 STI 39 RECIN 18 THA 32 STO VL 8 AGA IND SENSE V B 11 10 V MP 14 V MPS 13 MIC1 TXA 5 MIC2 4 MIC 2 DTMF TTXA 38 TX ACL INLDR 27 INLDT 26 Figure...
Description Monolithic Integrated Feature Phone Circuit
From old datasheet system

File Size 617.58K  /  32 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5361203C2W
OCR Text ...tures performance range speed t rac t cac t rc -5 50ns 15ns 90ns -6 60ns 15ns 110ns pin names pin name function a0 - a9 address inputs dq0 - dq35 data in/out w read/write enable ras0 row address strobe cas0 - cas3 column address strobe pd...
Description 1M x 36 DRAM SIMM(1M x 36 动RAM模块)

File Size 235.89K  /  16 Page

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    Samsung Semiconductor Co., Ltd.
Part No. KMM372V3200CS1
OCR Text ... 155 ns access time from ras t rac 50 60 ns 3,4,10 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 n...
Description RES400,5.11K,1%,1/4W 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3

File Size 458.09K  /  18 Page

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    AS4C1M16F5

Alliance Semiconductor Corporation
Part No. AS4C1M16F5
OCR Text ...nit maximum ras access time t rac 50 60 ns maximum column address access time t aa 25 30 ns maximum cas access time t cac 13 17 ns maximum output enable ( oe ) access time t oea 13 15 ns minimum read or write cycle time t rc 84 104 ns m...
Description 5V 1M×16 CMOS DRAM (Fast-page Mode)(5V 1M×16 CMOS动态RAM(快速页面模式))

File Size 378.75K  /  21 Page

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    NEC Corp.
Part No. MC-42S8LFF64S
OCR Text ...rent i cc1 /ras, /cas cycling t rac = 50 ns 1,080 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8.0 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 1.6 /ras only ...
Description 3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)

File Size 278.00K  /  32 Page

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    NEC Corp.
Part No. MC-428LFH641
OCR Text ...rent i cc1 /ras, /cas cycling t rac = 50 ns 840 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 760 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 4 /ras only refres...
Description 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)

File Size 275.63K  /  32 Page

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    NEC Corp.
Part No. MC-428LFG641
OCR Text ...rent i cc1 /ras, /cas cycling t rac = 50 ns 1,080 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 4 /ras only refr...
Description 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)

File Size 275.72K  /  32 Page

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