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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM5364005CSWG
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OCR Text |
...tures performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 c... |
Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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File Size |
417.45K /
21 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM5364005BSWG
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OCR Text |
...tures performance range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 c... |
Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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File Size |
389.50K /
19 Page |
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it Online |
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Atmel
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Part No. |
U4092B
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OCR Text |
...DO - + 24 34 RECO MUTX 37 36 GR rac 35 STI 39 RECIN 18 THA 32
STO
VL 8
AGA IND
SENSE V B 11 10
V MP 14 V MPS 13
MIC1 TXA
5
MIC2
4
MIC
2
DTMF
TTXA
38
TX ACL
INLDR
27
INLDT
26
Figure... |
Description |
Monolithic Integrated Feature Phone Circuit From old datasheet system
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File Size |
617.58K /
32 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KMM5361203C2W
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OCR Text |
...tures performance range speed t rac t cac t rc -5 50ns 15ns 90ns -6 60ns 15ns 110ns pin names pin name function a0 - a9 address inputs dq0 - dq35 data in/out w read/write enable ras0 row address strobe cas0 - cas3 column address strobe pd... |
Description |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
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File Size |
235.89K /
16 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM372V3200CS1
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OCR Text |
... 155 ns access time from ras t rac 50 60 ns 3,4,10 access time from cas t cac 18 20 ns 3,4,5,11 access time from column address t aa 30 35 ns 3,10,11 cas to output in low-z t clz 5 5 ns 3,11 output buffer turn-off delay t off 5 18 5 20 n... |
Description |
RES400,5.11K,1%,1/4W 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
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File Size |
458.09K /
18 Page |
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it Online |
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NEC Corp.
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Part No. |
MC-42S8LFF64S
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OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 1,080 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8.0 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 1.6 /ras only ... |
Description |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)
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File Size |
278.00K /
32 Page |
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NEC Corp.
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Part No. |
MC-428LFH641
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OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 840 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 760 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 4 /ras only refres... |
Description |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)
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File Size |
275.63K /
32 Page |
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it Online |
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NEC Corp.
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Part No. |
MC-428LFG641
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OCR Text |
...rent i cc1 /ras, /cas cycling t rac = 50 ns 1,080 ma 1, 2, 3 t rc = t rc (min.) , i o = 0 ma t rac = 60 ns 920 standby current i cc2 /ras, /cas 3 v ih (min.) , i o = 0 ma 8 ma /ras, /cas 3 v cc - 0.2 v, i o = 0 ma 4 /ras only refr... |
Description |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的DRAM模块)
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File Size |
275.72K /
32 Page |
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it Online |
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