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  sh-2 Datasheet PDF File

For sh-2 Found Datasheets File :: 12083    Search Time::7.36ms    
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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ... Op er ati ms s sh ot) (1 10 -1 Operation in this area is limited by R DS(on) on (T c= 25 -0.1 ...2 -3 Gate to Source Voltage -4 -5 V GS (V) -10 -2.5 V -2 V -10 0 -2 -4 -6 Drain to So...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...(on) ra tio (1 n sh 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10 -10 (A) Typical Tra...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...s = ms DC 10 Op ms er (1 at ion sh ot (T ) Operation in c= 25 this area is C ) limited by R DS(on) 60 Channel Dissipation 40 20 ...2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) Drain Current 25C -8...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...is limited by R DS(on) (1 er sh ot) (T atio c= n 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25 C -0.1 -0.1...2.5 V 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 -30 Drain Current -20 -10 75 C ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ... pe s ra (1 tio sh n (T ot ) 10 Operation in this area is limited by R DS(on) c= 25 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -10 -30 -100 Drain...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ547

HITACHI[Hitachi Semiconductor]
Part No. 2SJ547
OCR Text ... s s (1 pe ra tio sh n ot 10 c= Operation in 25 this area is limited by R DS(on) (T ) 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -10 -30 -100 Drain to So...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.45K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ... 40 ra tio (1 n sh (T ot ) 20 Operation in this area is limited by R DS(on) c= 25 0 50 100 150 Tc (C) 200 Case Temperature -0.2 -0.1 Ta = 25 C -0.1 -0.3 -1 -3 -10 -30 -100 Drain to S...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ...is limited by R DS(on) (1 er sh ot) (T atio c= n 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25 C -0.1 -0.1...2.5 V 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 -30 Drain Current -20 -10 75...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ... s s 20 -1 (1 er sh ot) (T atio Operation in c= n 25 this area is C limited by R DS(on) ) Op -0.1 Ta = 25 C 0 ...2 -3 Gate to Source Voltage -4 -5 V GS (V) -10 -2.5 V -2 V -10 0 -2 -4 -6 Drain to So...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...0 ion 1 ms (T 0 s m s sh ot) C ) Channel Dissipation Drain Current 100 -10 -3 -1 -0.3 er at (1 50 Oper...2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) -60 Drain Current -40 -20 75 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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For sh-2 Found Datasheets File :: 12083    Search Time::7.36ms    
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