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    CY14E064L CY14E064L-SZ25XCT CY14E064L-SZ45XCT

Cypress Semiconductor
Part No. CY14E064L CY14E064L-SZ25XCT CY14E064L-SZ45XCT
OCR Text ...i-state. Ground for the device. should be connected to ground of the system. DQ0-DQ7 Input/Output Bidirectional Data I/O lines. Used as input or output lines depending on operation. Power Supply Power Supply inputs to the device. Inpu...
Description 64-Kbit (8K x 8) nvSRAM

File Size 838.49K  /  16 Page

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    CPE-503

CUI INC,
Part No. CPE-503
OCR Text ...dicular directions for 2 hours. should be 10% of the initial The part will be dropped from a height of measurements. The SPL should 75 cm onto a 40 mm thick wooden board 3 be within 10dB compared with times in 3 axes (X, Y, Z) for a total o...
Description piezo audio transducer

File Size 337.45K  /  5 Page

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    CPE-502

CUI INC,
Part No. CPE-502
OCR Text ...dicular directions for 2 hours. should be 10% of the initial The part will be dropped from a height of measurements. The SPL should 75 cm onto a 40 mm thick wooden board 3 be within 10dB compared with times in 3 axes (X, Y, Z) for a total o...
Description piezo audio transducer

File Size 275.68K  /  5 Page

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    CM800E6C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E6C-66H
OCR Text ...Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperatu...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.23K  /  7 Page

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    CD-700-KAC-GBB-77.760 CD-700-LAC-GBB-77.760 CD-700-KAF-GBB-77.760 CD-700-LAF-GBB-77.760 CD-700-KAC-NEB-77.760 CD-700-LAC

Vectron International, Inc
Part No. CD-700-KAC-GBB-77.760 CD-700-LAC-GBB-77.760 CD-700-KAF-GBB-77.760 CD-700-LAF-GBB-77.760 CD-700-KAC-NEB-77.760 CD-700-LAC-NEB-77.760 CD-700-KAF-NEB-77.760 CD-700-LAF-NEB-77.760 CD-700-KAC-NEC-77.760 CD-700-LAC-NEC-77.760 CD-700-KAF-NEC-77.760 CD-700-LAF-NEC-77.760 CD-700-KAC-NBC-77.760 CD-700-LAC-NBC-77.760 CD-700-KAF-NBC-77.760 CD-700-LAF-NBC-77.760 CD-700-KAC-NCB-77.760 CD-700-LAC-NCB-77.760 CD-700-KAF-NCB-77.760 CD-700-LAF-NCB-77.760 CD-700-KAC-GBC-77.760 CD-700-LAC-GBC-77.760 CD-700-KAF-GBC-77.760 CD-700-LAF-GBC-77.760 CD-700-KAC-NED-77.760 CD-700-LAC-NED-77.760 CD-700-KAF-NED-77.760 CD-700-LAF-NED-77.760 CD-700-KAC-NDD-77.760 CD-700-LAC-NDD-77.760 CD-700-KAF-NDD-77.760 CD-700-LAF-NDD-77.760 CD-700-KAC-GAC-77.760 CD-700-LAC-GAC-77.760 CD-700-KAF-GAC-77.760 CD-700-LAF-GAC-77.760 CD-700-KAC-GBD-77.760 CD-700-LAC-GBD-77.760 CD-700-KAF-GBD-77.760 CD-700-LAF-GBD-77.760 CD-700-KAC-GCB-77.760 CD-700-LAC-GCB-77.760 CD-700-KAF-GCB-77.760 CD-700-LAF-GCB-77.760 CD-700-LAF-GAB-77.760 CD-700-LAF-GAD-77.760 CD-700-KAC-NAC-77.760 CD-700-LAC-NAC-77.760 CD-700-KAF-NAC-77.760 CD-700-LAF-NAC-77.760 CD-700-KAC-GEC-77.760 CD-700-LAC-GEC-77.760 CD-700-KAF-GEC-77.760 CD-700-LAF-GEC-77.760 CD-700-KAC-N
OCR Text ...uF and 0.1uF parallel capacitor should be located as close to pin 14 as possible (and grounded). 2. Figure 2 defines these parameters. Figure 3 illustrates the equivalent five gate TTL load and operating conditions under which these paramet...
Description Complete VCXO Based Phase Lock Loop
PHASE LOCKED LOOP, CQCC16

File Size 119.85K  /  14 Page

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    CCFCEA-25M125 CDFCEA-25M125 CCFCEJ-25M125 CDFCEJ-25M125 CCFCEP-25M125 CDFCEP-25M125 CCFCER-25M125 CDFCER-25M125 CCFGDP-2

Vectron International, Inc
Part No. CCFCEA-25M125 CDFCEA-25M125 CCFCEJ-25M125 CDFCEJ-25M125 CCFCEP-25M125 CDFCEP-25M125 CCFCER-25M125 CDFCER-25M125 CCFGDP-25M125 CDFGDP-25M125 CCTGDP-25M125 CDTGDP-25M125 CCFGDA-25M125 CDFGDA-25M125 CCTGDA-25M125 CDTGDA-25M125 CCFDDJ-25M125 CDFDDJ-25M125 CCTDDJ-25M125 CDTDDJ-25M125 CCFDDP-25M125 CDFDDP-25M125 CCTDDP-25M125 CDTDDP-25M125 CCFCHJ-25M125 CDFCHJ-25M125 CCTCHJ-25M125 CDTCHJ-25M125 CCFDHJ-25M125 CDFDHJ-25M125 CCTDHJ-25M125 CCFHDA-25M125 CDFHDA-25M125 CCTHDA-25M125 CDTHDA-25M125 CCFHCR-25M125 CDFHCR-25M125 CCTHCR-25M125 CDTHCR-25M125 CCFCLA-25M125 CDFCLA-25M125 CCTCLA-25M125 CDTCLA-25M125 CCFHEP-25M125 CDFHEP-25M125 CCTHEP-25M125 CDTHEP-25M125 CCTHER-25M125 CDTHER-25M125 CCFGLP-25M125 CDFGLP-25M125 CCTGLP-25M125 CDTGLP-25M125 CDTHCA-25M125 CDTHCJ-25M125 CDTHCP-25M125 CDTHDJ-25M125 CDTHDP-25M125 CDTHDR-25M125 CDTHEA-25M125 CDTHEJ-25M125 CDTHHA-25M125 CDTHHP-25M125 CCFHDJ-25M125 CCFHDP-25M125 CCFHDR-25M125 CCFGHR-25M125 CDFGHR-25M125 CCTGHR-25M125 CDTGHR-25M125 CDFHDP-25M125 CCTHDP-25M125 CCFCHA-25M125 CDFCHA-25M125 CCTCHA-25M125 CDTCHA-25M125 CCFHLP-25M125 CCTHLP-25M125 CDTHLP-25M125 CCFCDP-25M125 CDFCDP-25M125 CCTCDP-25M125 CDTCDP-25M125 CCFFER-25M125 CDFFER-25M125 CCTFER-25M
OCR Text ... A 0.01uF and a 0.1uF capacitor should be located as close to the supply as possible (to ground) is recommended. 2. Figure 1 defines these parameters. Figure 2 illustrates the operating conditions under which these parameters are tested and...
Description 3.3, 5.0 volt CMOS Oscillator

File Size 179.92K  /  7 Page

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    HAT2119H HAT2119H-EL-E

Renesas Electronics Corporation
Part No. HAT2119H HAT2119H-EL-E
OCR Text ...cation circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other militar...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 71.34K  /  4 Page

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    HAT2132H HAT2132H-EL-E

Renesas Electronics Corporation
Part No. HAT2132H HAT2132H-EL-E
OCR Text ...cation circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other militar...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 102.67K  /  7 Page

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    HAT2200WP HAT2200WP-EL-E

Renesas Electronics Corporation
Part No. HAT2200WP HAT2200WP-EL-E
OCR Text ...cation circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other militar...
Description Silicon N Channel Power MOS FET Power Switching

File Size 109.27K  /  8 Page

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    HAT2201WP HAT2201WP-EL-E

Renesas Electronics Corporation
Part No. HAT2201WP HAT2201WP-EL-E
OCR Text ...cation circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other militar...
Description Silicon N Channel Power MOS FET Power Switching

File Size 109.47K  /  8 Page

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