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Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
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| Part No. |
SST32HF32A1-70-4E-LSE SST32HF32A1-70-4C-LS SST32HF32A1-70-4E-LFSE
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| OCR Text |
...ched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of-erase operation can be determine... |
| Description |
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA63
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| File Size |
410.61K /
35 Page |
 View
it Online |
Download Datasheet
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Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
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| Part No. |
SST36VF1602E-70-4C-B3KE SST36VF1601E-70-4C-B3KE SST36VF1601E-70-4I-EKE SST36VF1601E-70-4C-EKE
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| OCR Text |
...ched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the inter- nal erase operation begins after the sixth we# pulse. any commands issued during the sector- or... |
| Description |
16 Mbit (x8/x16) Concurrent SuperFlash 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
16 Mbit (x8/x16) Concurrent SuperFlash 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
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| File Size |
594.49K /
35 Page |
View
it Online |
Download Datasheet |
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Silicon Storage Technology, Inc.
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| Part No. |
SST34HF3244C-70-4E-LSE
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| OCR Text |
...ched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. any commands issued during the block- or se... |
| Description |
32 Mbit Concurrent SuperFlash 4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
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| File Size |
764.57K /
40 Page |
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it Online |
Download Datasheet |
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Silicon Storage Technology, Inc.
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| Part No. |
SST34HF162G-70-4C-L3KE SST34HF162G-70-4E-L3KE SST34HF164G-70-4C-LBK
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| OCR Text |
...ched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. any commands issued during the block- or se... |
| Description |
16 Mbit Dual-Bank Flash 2/4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA48
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| File Size |
382.93K /
31 Page |
View
it Online |
Download Datasheet |
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Atmel, Corp.
ATMEL CORP
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| Part No. |
AT49F001AT-55VI AT49F001AT-55JI ANT-55VI AT49F001A-55TJ
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| OCR Text |
...e of ce or we (except for the sixth cycle of the sector erase com- mand), whichever occurs last. the data is latched by the first rising edge of ce or we . standard microprocessor write timings are used. the address locations used in th... |
| Description |
1-MEGABIT (128 X 8) 5-VOLT ONLY FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
1-MEGABIT (128 X 8) 5-VOLT ONLY FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
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| File Size |
398.42K /
18 Page |
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it Online |
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