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  stm-1 4 16 Datasheet PDF File

For stm-1 4 16 Found Datasheets File :: 2895    Search Time::4.781ms    
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    MTP10N40 MTP10N40E ON2540 MTP10N40E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text sTM Data Sheet TMOS E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is des...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive Drain Current -- Cont...
Description TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system

File Size 249.12K  /  8 Page

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    MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D

ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Single Pulse (tp 50 s) Drain Curren...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system

File Size 239.56K  /  6 Page

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    MTP12P10 MTP12P10_D ON2547

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP12P10 MTP12P10_D ON2547
OCR Text sTM Data Sheet Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive (tp 50 s) Drain Curr...
Description From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM

File Size 190.83K  /  6 Page

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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Dra...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...1.0 M) Gate-Source Voltage -- Continuous -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous -...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-repetitive (tp 10 ms) Dra...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an adv...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Single Pulse (tp 50 s) Drain Curren...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Cur...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...1.0 M) Gate-to-Source Voltage -- Continuous Gate-Source Voltage -- Non-repetitive (tp 10 ms) Drain ...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

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For stm-1 4 16 Found Datasheets File :: 2895    Search Time::4.781ms    
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