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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM50CY-H
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, ... |
Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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File Size |
71.32K /
5 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM20DX-H
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=0.28A -IC=20A (diode forward voltage) IC=20A, ... |
Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
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File Size |
66.38K /
5 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM100HA-H QM100HY-H
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A... |
Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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File Size |
84.94K /
5 Page |
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it Online |
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Micro Bridge Technology Co.,Ltd.
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Part No. |
ACT355A
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OCR Text |
...
Emitter-Drive Safe Region
VCEO
VCBO
VC
Table 1: Recommended NPN Transistor DEVICE
MJE13002
External Power Transistor
The...600V to 700V. As seen from Figure 2, NPN Reverse Bias Safe Operation Area, the breakdown voltage of ... |
Description |
ActivePSRTM Primary Switching Regulators
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File Size |
329.89K /
8 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM200HA-24
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ... |
Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
66.40K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM200HA-HK
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=2.6A -IC=200A (diode forward voltage) IC=200A... |
Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
70.59K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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Part No. |
QM200HA-HK
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OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=2.6A -IC=200A (diode forward voltage) IC=200A... |
Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
78.66K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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