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IRF[International Rectifier]
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Part No. |
IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
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OCR Text |
... RDS(on) 0.10 0.10 0.10 0.10 ID 26A 26A 26A 26A
TO-254AA Tabless
International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven perfor... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
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File Size |
327.23K /
12 Page |
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IXYS Corporation
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Part No. |
IXFB52N90P
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OCR Text |
... IF = IS, VGS = 0V, Note 1 IF = 26A, -di/dt = 100A/s VR = 100V
Characteristic Values Min. Typ. Max. 52 208 1.5 300 1.8 26 A A V ns C A
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test C... |
Description |
Polar Power MOSFET HiPerFET 52 A, 900 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
116.26K /
4 Page |
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IRF[International Rectifier]
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Part No. |
IRF6691
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OCR Text |
... 12V VGS = -12V VDS = 10V, ID = 26A VDS = 10V VGS = 4.5V ID = 17A See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe
mV/C ID = 10mA, reference to 25C
ns
ID = 26A Clamped Inductive Load VGS = 0V VDS = 10V = 1.0MHz Max. 230 26 ... |
Description |
HEXFET Power MOSFET plus Schottky Diode
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File Size |
226.24K /
10 Page |
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it Online |
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Price and Availability
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