-38a pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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-38a Datasheet PDF File

For -38a Found Datasheets File :: 507 Search Time::1ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUF75945P3 HUF75945G3 HUF75945S3ST
OCR Text	38A, 200V, 0.071 Ohm, N-Channel, UltraFET(R) Power MOSFETs Packaging JEDEC TO-247 SOURCE DRAIN GATE Features * Ultra Low On-Resistance - rDS(ON) = 0.071, VGS = 10V * Simulation Models - Temperature Compensated PSPICE(R) and SABERTM El...
Description	38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs 38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs 38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs
File Size	206.61K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3518 IRFU3518 IRFR3518TR IRFU3518TR
OCR Text	...tics 1000.00 3.0 I D = 38A ID, Drain-to-Source Current () 2.5 100.00 RDS(on) , Drain-to-Source On Resistance T J = 25C T J = 175C 2.0 (Normalized) 1.5 10.00 1.0 VDS = 25V 20s PULSE WIDTH 1.00 4.0 6...
Description	100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
File Size	540.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
OCR Text	... 30V f = 1.0MHz TJ = 150C, IC = 38A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 22 TJ = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 15A, L = 1.07mH VGE = 15V, RG = 22 di/dt = 875A/s 22 4 CT2 CT3 WF4 WF4...
Description	600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	275.00K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text	... 4.8 C Tch2 = Tcase + (9.6V x 1.38A - 8.0W + 1.5W) x 2.4C/W = Tcase + 16.2 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=8W, the required thermal ...
Description	Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA 135-175MHz 8W 9.6V PORTABLE RADIO
File Size	61.86K / 9 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
OCR Text	...voltage reapplied, Note 1 IFM = 38A, TJ = +25C TJ = +175C TJ = +175C Note 1. I2t for time tx = I2 t S tx Thermal-Mechanical Specifications: Parameter Maximum Operation Junction Temperature Maximum Storage Temperature Maximum Inter...
Description	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
File Size	23.18K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE5825 NTE5818 NTE5819 NTE5823
OCR Text	...l vF VF IR Test Conditions iF = 38A, TJ = +150C IF = 12A, TC = +25C Rated DC Voltage TC = +25C TC = +100C Min - - - - Typ 1.2 1.0 10 0.5 Max 1.5 1.4 25 3.0 Unit V V A mA Reverse Recovery Characteristics: Parameter Reverse Recovery Time ...
Description	Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
File Size	17.84K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	SPP77N06S2-12 SPB77N06S2-12
OCR Text	...state resistance V GS=10V, I D=38A 1Defined by design. Not subject to production test. 2Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2...
Description	OptiMOS Power-Transistor Low Voltage MOSFETs - TO220/263; 77 A; 55V; NL; 12 mOhm
File Size	310.94K / 8 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] TE Connectivity, Ltd. Rohm Co., Ltd.
Part No.	SR230-6 SR230-24 SR60 SR660-9 SR110-12 SR110-15 SR110-18 SR110-2 SR110-20 SR110-28 SR110-48 SR110-5 SR110-6 SR110-9 SR20-12 SR20-15 SR20-18 SR20-2 SR20-20 SR20-24 SR20-28 SR20-48 SR20-5 SR20-6 SR20-9 SR230-12 SR230-15 SR230-18 SR230-2 SR230-20 SR230-28 SR230-48 SR230-5 SR230-9 SR330-12 SR330-15 SR330-18 SR330-2 SR330-20 SR330-24 SR330-28 SR330-48 SR330-5 SR330-6 SR330-9 SR35-12 SR35-15 SR35-18 SR35-2 SR35-20 SR35-24 SR35-28 SR35-48 SR35-5 SR35-6 SR35-9 SR60-12 SR60-15 SR60-18 SR60-2 SR60-20 SR60-24 SR60-28 SR60-48 SR60-5 SR60-6 SR60-9 SR660-12 SR660-15 SR660-18 SR660-2 SR660-20 SR660-24 SR660-28 SR660-48 SR660-5 SR660-6 SR110-24
OCR Text	...R230-5 230W 46A 5V SR230-6 228W 38A 6V SR230-9 229.5W 25.5A 9V SR230-12 234W 19.5A 12V SR230-15 232.5W 15.5A 15V SR230 SR230-18 234W 13A 18V SR230-20 240W 12A 20V SR230-24 240W 10A 24V SR230-28 238W 8.5A 28V SR230-48 240W 5A 48V SR33...
Description	Single output 20W ~ 660W隆隆 ZTK-89 Single output 20W ~ 660W 单输0660W Single output 20W ~ 660W
File Size	370.39K / 4 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	IRF150
OCR Text	....151) dia. 2 plcs. 2 100V 38A 0.055 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. TO-3 Metal Package Pin 1 - Gate Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (T...
Description	N-CHANNEL POWER MOSFET
File Size	21.19K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF150 JANTXV2N6764 JANTX2N6764
OCR Text	...150 BVDSS 100V RDS(on) 0.055 ID 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geom...
Description	100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
File Size	149.38K / 7 Page	View it Online	Download Datasheet

For -38a Found Datasheets File :: 507 Search Time::1ms
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