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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... = 15V, IC = 75A, TJ = 125C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = 6.0V, IC = 750A -11 -- mV/C VCE = 6.0V, IC = 750A VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- gfe Forward Transconductance -- 107 -- S VCE = 25V, IC = 75...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    HD74LV573A

HITACHI[Hitachi Semiconductor]
Part No. HD74LV573A
OCR Text ... time Hold time Pulse width tsu th tw 5.0 2.0 6.5 8.6 -- -- -- 17.3 -- -- -- 1.0 5.0 2.0 6.5 19.0 -- -- -- ns ns ns CL = 50 pF Data before LE Data after LE LE "H" 6 HD74LV573A Switching Characteristics (cont) * VCC ...
Description Octal D-type Transparent Latches with 3-state Outputs

File Size 65.11K  /  16 Page

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    Nexperia
Part No. PSMN8R0-80YL
OCR Text ...r conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 5 - - 0.63 k/w 003aai463 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) z th(j-mb) (k/w) (k/w) p t t p t t p = t...
Description N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56

File Size 345.40K  /  12 Page

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    SI4845DY

Vishay Siliconix
Part No. SI4845DY
OCR Text ...i d = ?250 a ?25 mv/ c v gs(th) temperature coefficient v gs(th)/tj i d = ?250 a 2.6 mv/ c gate threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?0.5 ?1.5 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100...
Description P-Channel 20-V (D-S) MOSFET with Schottky Diode

File Size 131.60K  /  9 Page

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    Nexperia
Part No. PNE20010ER
OCR Text ... typ max unit [1] - - 170 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - - 105 k/w r th(j-sp) thermal resistance from junction to solder point [3] - - 15 k/w [1] device mounted on an fr4 pcb, single-sided copper...
Description 200 V, 1 A hyperfast recovery rectifier

File Size 216.11K  /  13 Page

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    SMM4F SMM4F5.0A

STMicroelectronics
Part No. SMM4F SMM4F5.0A
OCR Text ...s symbol parameter value unit r th(j-l) junction to leads 20 c/w r th(j-a) junction to ambient on pcb with recommended pad layout 250 table 3. electrical characteristics - parameter definitions (t amb = 25 c) symbol parameter v rm stand-of...
Description High junction temperature Transil

File Size 127.98K  /  10 Page

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    Infineon
Part No. SPI100N03S2-03
OCR Text ... v gs = v ds i d =250a v gs(th) 2.1 3 4 zero gate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na d...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.3mOhm, 100A, NL

File Size 526.80K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AO7408
OCR Text ...ow gate charge and operation wi th gate voltages as low as 1.8v. this device is suitab le for use as a load switch or in pwm applications. 20v g ds d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-363) top view bottom view ...
Description Single LV MOSFETs (12V - 30V)

File Size 248.50K  /  5 Page

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    SWT821-S

Seoul Semiconductor
Part No. SWT821-S
OCR Text ... iv wa s m e as u r e d at th e pe ak o f th e s p at i a l pat t e r n whi c h m a y not be align e d wi th th e m e ch ani c al axi s of th e l e d pac k age . lumin o us in t e nsit y m e as u r e m ent allowan c e i...
Description surface-mount LED

File Size 507.85K  /  16 Page

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    2SK3633

Toshiba Semiconductor
Part No. 2SK3633
OCR Text ... 640 v) ? enhancement mode: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 800 v drain-gate voltage (r gs = 20 k ) v dgr 800 ...
Description Silicon N-Channel MOS Type Switching Regulator Applications

File Size 234.82K  /  6 Page

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