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  0.0114 Datasheet PDF File

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    友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB772S-SOT89 2SB772S-AB3-R
OCR Text ... TSTG RATINGS -40 -30 -5 -7 -3 -0.6 1.0 +150 -40 ~ +150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current SYMBOL ICBO IEBO hFE1 DC Current Gai...
Description PNP EPITAXIAL SILICON TRANSISTOR

File Size 49.72K  /  4 Page

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    Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
Part No. 2SB772SL-T92-K 2SB772SL-T92-B 2SB772S-T92-B 2SB772S-T92-K 2SB772S-TO92
OCR Text ... TSTG RATINGS -40 -30 -5 -7 -3 -0.6 0.5 +150 -40 ~ +150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current SYMBOL ICBO IEBO hFE1 DC Current Ga...
Description PNP EPITAXIAL SILICON TRANSISTOR 进步党外延硅晶体

File Size 97.36K  /  4 Page

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    UTC[Unisonic Technologies]
Part No. 2SB776
OCR Text ... VALUE -50 -50 -5 10 1 -3 -7 -0.6 150 -55 ~ +150 UNIT V V V W W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMB...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SB788 2SB0788
OCR Text ...lementary to 2SD0958 (2SD958) (0.4) Unit: mm 6.90.1 (1.5) (1.5) 3.50.1 2.50.1 (1.0) (1.0) 2.00.2 2.40.2 1.00.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Colle...
Description For High Breakdown Voltage Low-noise Amplification

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    http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SB790 2SB0790
OCR Text 0.4) Unit: mm 2.50.1 (1.0) (1.5) 3.50.1 (1.0) 2.00.2 2.40.2 Features * Low collector-emitter saturation voltage VCE(sat) * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed ci...
Description For Low-Frequency Output Application

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    Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB819 2SB0819
OCR Text ...tion Complementary to 2SD1051 (0.4) Unit: mm 6.90.1 (1.5) (1.5) 3.50.1 2.50.1 (1.0) (1.0) 2.00.2 2.40.2 1.00.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Colle...
Description For Low-Frequency Output Amplification 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

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    Wing Shing Computer Com...
WINGS[Wing Shing Computer Components]
Part No. 2SB834
OCR Text ... Test Condition VCB= -60V , IE=0 VEB= -7V, IC=0 VCE= -5V, IC=-0.5A VCE= -5V, IC=-3A IC=-3A , IB=-0.3A VCE= -5V , IC=-0.5A Min Typ Max -100 -100 300 Unit A A 60 20 -0.4 9 -1.0 V MHZ Wing Shing Computer Components Co....
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    ROHM[Rohm]
Part No. 2SB852K_1 2SB852K 2SB852K1
OCR Text 0.3A) 2SB852K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SD1383K. Packaging specifications Type Package hFE Marking Code Basic ordering unit (pieces) ...
Description High-gain Amplifier Transistor (−32V, −0.3A)

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    ROHM[Rohm]
Part No. 2SB852K 2SA830S
OCR Text 0.3A) 2SB852K / 2SA830S Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S. External dimensions (Unit : mm) 2SB852K 2.9 0.4 (3) 1.1 0...
Description High-gain Amplifier Transistor (-32V, -0.3A)

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    Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SB928A 2SB0928 2SB0928A 2SB928
OCR Text ...E VCE(sat) fT IE = -500 A, IC = 0 VCB = -200 V, IE = 0 VEB = -4 V, IC = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -400 mA VCE = -10 V, IC = -400 mA IC = -500 mA, IB = -50 mA VCE = -10 V, IC = - 0.5 A, f = 10 MHz 40 60 50 -1.0 -1.0 V V M...
Description For Power Amplification

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