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Samsung Semiconductor Co., Ltd.
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Part No. |
2SK3600-01SJ 2SK3600-01L
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OCR Text |
... voltage v gs (th) v ds =v gs 3.0 - 5.0 v zero gate voltage v ds =100v vgs=0v t ch =25 c- - 25 drain current i dss vds=80v v gs =0v t ch =1...112a 22 storage test duration : 1000hr 3 temperature temperature : 852c b-121a humidity relative hu... |
Description |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset STD MOSFET 性病MOSFET
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File Size |
313.08K /
22 Page |
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