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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP5N60A
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| OCR Text |
... 600 4.5 2.8 18 30 331 4.5 11 3.0 110 0.88 - 55 to +150
Units V A A V mJ A mJ V/ns W W/
300
Thermal Resistance
Symbol RJC RCS RJA...30V VGS=-30V VDS=600V VDS=480V,TC=125 VGS=10V,ID=2.25A VDS=50V,ID=2.25A
See Fig 7
VDS=5V,ID... |
| Description |
Advanced Power MOSFET
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| File Size |
227.30K /
7 Page |
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ROHM[Rohm]
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| Part No. |
SST4401 2N4401 MMST4401
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| OCR Text |
...mm)
SST4401
(1) 2.90.2 1.90.2 0.95 0.95 (2) 0.95 +0.2
-0.1
0.450.1
+0.2 1.3-0.1
2.40.2
0 to 0.1 0.2Min.
Package, marking...30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1... |
| Description |
NPN Medium Power Transistor (Switching)
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| File Size |
76.61K /
4 Page |
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ROHM[Rohm]
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| Part No. |
SST4403 2N4403 MMST4403
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| OCR Text |
...mm)
SST4403
(1) 2.90.2 1.90.2 0.95 0.95 (2) 0.95 +0.2
-0.1
0.450.1
2.40.2
1.3 +0.2 -0.1
0 to 0.1 0.2Min.
Package, markin...30V, VEB(OFF)= -2V, IC= -150mA, IB1= -15mA VCC= -30V, VEB(OFF)= -2V, IC= -150mA, IB1= -15mA VCC= -30... |
| Description |
PNP Medium Power Transistor (Switching)
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| File Size |
78.42K /
4 Page |
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LINEAR[Linear Integrated Systems]
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| Part No. |
SST824 SST823
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| OCR Text |
...s rDS(ON) = 5 C = 25pF IG(ON) = 0.05A
1. Body 2. Source
-55 to +150 C -55 to +125 C PD = 300mW
3. Drain
4. Gate
ELECTRICAL CHARAC...30V, VGS = VGD = 22.5V
100
120
Leakage Current Drain Node Leakage Current Source Node Leaka... |
| Description |
HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
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| File Size |
221.74K /
2 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST2303
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| OCR Text |
...
JA
Typical -30 +20 -2.6 -2.0 -10 -1.25 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square,...30V,VGS=0V VDS=-30V,VGS=0V TJ=55J VDSO -5V,VGS=-10V VGS=-10V,ID=-2.6A VGS=-4.5V,ID=-2.0A VDS=-10V,ID... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
76.53K /
6 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST2304
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| OCR Text |
...G Rc
JA
Typical 30 20 2.5 2.0 10 1.25 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, M...30V,VGS=1.0V IDSS VDS=30V,VGS=0V TJ=55J ID(on) VDSU 4.5V,VGS=10V VDSU 4.5V,VGS=4.5V RDS(on) VGS=10V,... |
| Description |
N Channel Enchancement Mode MOSFET
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| File Size |
76.26K /
6 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST2306
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| OCR Text |
...al 30 O 20 3.5 2.5 12 1.25 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, C...30V,VGS=1.0V VDS=30V,VGS=0V TJ=55J VGS=10V,ID=3.5A VGS=5V,ID=2.8A VDS=4.5V,ID=2.5V IS=-1.25A,VGS=0V ... |
| Description |
N Channel Enhancement Mode MOSFET
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| File Size |
146.51K /
8 Page |
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STANSON[Stanson Technology]
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| Part No. |
ST3403
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| OCR Text |
...0 +/-12 -3.5 -2.8 -20 -1.4 1.25 0.81 150 -55/150 105
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 2
P Channel Enchancement Mode MOSFET -3.... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
144.82K /
7 Page |
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SEMIWELL[SemiWell Semiconductor]
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| Part No. |
SDW80S600
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| OCR Text |
0 Glass passivated chips Very short recovery time Extremely low switching loss Soft recovery behavior High ruggedness type
IFAVM =...30V ,di/dt = -50A/us 1A , VR=30V ,di/dt = -50A/us
Reverse Recovery Current IF = 40A , VR=30V ,di/... |
| Description |
65ns Fast Recovery Diode, 600V Vrrm, 80A If, 1.5V Peak Forward Voltage
Fast Soft Recovery Rectifier Diode
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| File Size |
629.03K /
5 Page |
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