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UZ20BH R39MF5 BPC350 STCF03 09012 CM929 70450 AN7397K
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  0.345v Datasheet PDF File

For 0.345v Found Datasheets File :: 181    Search Time::2.938ms    
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    ST Microelectronics
Part No. STW26NM50
OCR Text 0.10 w -26ato-247 zener-protected mdmesh?power mosfet typical r ds (on) = 0.10 w high dv/dt and avalanche capabilities improved esd c...345v r ds(on) static drain-source on resistance v gs =10v,i d = 13 a 0.1 0.12 w symbol parameter tes...
Description N-CHANNEL Power MOSFET

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    ST Microelectronics
Part No. STP10NB50
OCR Text 0.55 w - 10.6a - to-220/to-220fp powermesh ? mosfet n typical r ds(on) = 0.55 w n extremely high dv/dt capability n 100% avalanche test...345v r ds(on) static drain-source on resistance v gs = 10v i d = 5.3 a 0.55 0.60 w i d(on) on st...
Description N-CHANNEL 500V - 0.55 OHM - 10.6A - TO-220 POWERMESH MOSFET

File Size 338.80K  /  9 Page

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    ST Microelectronics
Part No. STW26NM60
OCR Text 0.125 w - 26a to-247 zener-protected mdmesh?power mosfet n typical r ds (on) = 0.125 w n high dv/dt and avalanche capabilities n improved e...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 13 a 0.125 0.135 w symbol param...
Description N-CHANNEL 600V - 0.125 OHM - 26A TO-247 ZENER-PROTECTED MDMESH POWER MOSFET
N-CHANNEL Power MOSFET

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    ST Microelectronics
Part No. P4NB10 P4NB100
OCR Text ... ds drain-source voltage (v gs =0) 1000 v v dgr drain- gate voltage (r gs =20k w ) 1000 v v gs gate-source voltage 30 v i d drain current (...345v r ds(on) static drain-source on resistance v gs =10v i d =2a 4 4.4 w i d(o n) on state drain cu...
Description Search --To STP4NB100

File Size 139.43K  /  9 Page

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    P4NB80

STMicroelectronics
Part No. P4NB80
OCR Text ...s drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d = 2 a 3 3.3 w i d(on) on state dr...
Description Search --To STP4NB80

File Size 273.08K  /  9 Page

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    ST Microelectronics
意法半导
Part No. STU10NB80
OCR Text 0.65 w - 10a - max220 powermesh ? mosfet preliminary data n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 100% avalanc...345v r ds(on) static drain-source on resistance v gs = 10v i d = 5.5 a 0.65 0.8 w i d(on) on sta...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET

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    ST Microelectronics
Part No. STW9NC70Z
OCR Text 0.90 w - 7.5a to-247 zener-protected powermesh?iii mosfet n typical r ds (on) = 0.9 w n extremely high dv/dt capability gate- to-source z...345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.75 a 0.9 1.2 w i d(on) on st...
Description N-channel MOSFET

File Size 202.61K  /  8 Page

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    意法半导
Part No. W15NB50
OCR Text 0.33 w - 14.6a - t0-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.33 w n extremely high dv/dt capability n 30v gate to source vo...345v r ds(on) static drain-source on resistance v gs =10v i d = 7.5 a 0.33 0.36 w w i d(o n) on stat...
Description N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

File Size 97.66K  /  9 Page

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    STN1NB80

STMicroelectronics
Part No. STN1NB80
OCR Text 0.2a - sot-223 powermesh ? mosfet n typical r ds(on) =16 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic ca...345v r ds(on) static drain-source on resistance v gs =10v i d =0.2 a 16 20 w i d(o n) on state drain...
Description N-CHANNEL MOSFET

File Size 107.40K  /  8 Page

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    ST Microelectronics
Part No. STP11NM60FD STP11NM60FDFP
OCR Text 0.40 w - 11a to-220 / to-220fp fdmesh?power mosfet (with fast diode) (1)i sd <11a, di/dt<400a/ s, v dd <v (br)dss , t j <t jmax (*)limited ...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.40 0.45 w symbol paramet...
Description N-CHANNEL 600V 0.40 OHM 11A TO-220/TO-220FP FDMESH POWER MOSFET

File Size 321.95K  /  9 Page

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For 0.345v Found Datasheets File :: 181    Search Time::2.938ms    
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