|
|
 |
ST Microelectronics
|
Part No. |
STW26NM50
|
OCR Text |
0.10 w -26ato-247 zener-protected mdmesh?power mosfet typical r ds (on) = 0.10 w high dv/dt and avalanche capabilities improved esd c...345v r ds(on) static drain-source on resistance v gs =10v,i d = 13 a 0.1 0.12 w symbol parameter tes... |
Description |
N-CHANNEL Power MOSFET
|
File Size |
257.51K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
STP10NB50
|
OCR Text |
0.55 w - 10.6a - to-220/to-220fp powermesh ? mosfet n typical r ds(on) = 0.55 w n extremely high dv/dt capability n 100% avalanche test...345v r ds(on) static drain-source on resistance v gs = 10v i d = 5.3 a 0.55 0.60 w i d(on) on st... |
Description |
N-CHANNEL 500V - 0.55 OHM - 10.6A - TO-220 POWERMESH MOSFET
|
File Size |
338.80K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
STW26NM60
|
OCR Text |
0.125 w - 26a to-247 zener-protected mdmesh?power mosfet n typical r ds (on) = 0.125 w n high dv/dt and avalanche capabilities n improved e...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 13 a 0.125 0.135 w symbol param... |
Description |
N-CHANNEL 600V - 0.125 OHM - 26A TO-247 ZENER-PROTECTED MDMESH POWER MOSFET N-CHANNEL Power MOSFET
|
File Size |
253.66K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
P4NB10 P4NB100
|
OCR Text |
... ds drain-source voltage (v gs =0) 1000 v v dgr drain- gate voltage (r gs =20k w ) 1000 v v gs gate-source voltage 30 v i d drain current (...345v r ds(on) static drain-source on resistance v gs =10v i d =2a 4 4.4 w i d(o n) on state drain cu... |
Description |
Search --To STP4NB100
|
File Size |
139.43K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics 意法半导
|
Part No. |
STU10NB80
|
OCR Text |
0.65 w - 10a - max220 powermesh ? mosfet preliminary data n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 100% avalanc...345v r ds(on) static drain-source on resistance v gs = 10v i d = 5.5 a 0.65 0.8 w i d(on) on sta... |
Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
File Size |
44.27K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
STW9NC70Z
|
OCR Text |
0.90 w - 7.5a to-247 zener-protected powermesh?iii mosfet n typical r ds (on) = 0.9 w n extremely high dv/dt capability gate- to-source z...345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.75 a 0.9 1.2 w i d(on) on st... |
Description |
N-channel MOSFET
|
File Size |
202.61K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
意法半导
|
Part No. |
W15NB50
|
OCR Text |
0.33 w - 14.6a - t0-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.33 w n extremely high dv/dt capability n 30v gate to source vo...345v r ds(on) static drain-source on resistance v gs =10v i d = 7.5 a 0.33 0.36 w w i d(o n) on stat... |
Description |
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
|
File Size |
97.66K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ST Microelectronics
|
Part No. |
STP11NM60FD STP11NM60FDFP
|
OCR Text |
0.40 w - 11a to-220 / to-220fp fdmesh?power mosfet (with fast diode) (1)i sd <11a, di/dt<400a/ s, v dd <v (br)dss , t j <t jmax (*)limited ...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.40 0.45 w symbol paramet... |
Description |
N-CHANNEL 600V 0.40 OHM 11A TO-220/TO-220FP FDMESH POWER MOSFET
|
File Size |
321.95K /
9 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|