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SamHop Microelectronics...
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| Part No. |
STK103
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| OCR Text |
0 11 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transistor a...5.6 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1.00a v... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
97.23K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD417L
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| OCR Text |
...acteristics v gs =0v,i s = -3a -0.75 -1.3 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to ...5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown volta... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.14K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD417S
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| OCR Text |
...acteristics v gs =0v,i s = -5a -0.8 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%...5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown volta... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
123.08K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STD616S STU616S
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| OCR Text |
...imum ratings v gs =0v,i s =1.5a 0.8 1.3 v notes a.pulse test:pulse width < 300us, duty ctcle < 2%. b.guaranteed by design, not subject to pr...5 a v ds =30v,i d =8a,v gs =4.5v nc 1.8 6.7 bv dss drain-source breakdown voltage e v gs =0v , i d =... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
140.93K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STK400
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| OCR Text |
...a d g d s sot-89 t a =70 c a 1.0 t a =70 c w 0.8 e as mj single pulse avalanche energy d 0.25 stk400 g r e r r p p r p p o r r product sum...5 pf c rss 9.5 pf q g 7.8 nc 11.2 105 14 t d(on) 1.70 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
93.31K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STK600
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| OCR Text |
0.80 4.4 v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics n-channel enhancement mode field effect transist...5 1.2 0.9 0.3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 tj=125 c -55 c 0.6 25 c i d , drain current(a) i d , drain... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.68K /
7 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STK900
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| OCR Text |
... ja d g d s sot-89 t a =70 c a 0.8 t a =70 c w 0.8 e as mj single pulse avalanche energy c 1.1 stk900 g r e r r p p r p p o r r product su...5 pf q g 7.5 nc 8.5 65 12 t d(on) 1.9 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching char... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
95.54K /
7 Page |
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it Online |
Download Datasheet |
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