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  10 30v Datasheet PDF File

For 10 30v Found Datasheets File :: 31263    Search Time::1.453ms    
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    IRF7811A IRF7809A IRF7811ATR

International Rectifier
Part No. IRF7811A IRF7809A IRF7811ATR
OCR Text ...- 8.5 28 IRF7811A Min Typ - 10 1.0 30 150 100 23 20.5 nA Max Units - 12 V m V A Conditions VGS = 0V, ID = 250A VGS = 4.5V, I D = 15A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 12V VGS=5V, ID=15A, VDS=16V ...
Description PROVISIONAL DATASHEET
Chipset for DC-DC Converters
30v Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 124.48K  /  4 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...ange Soldering Temperature, for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V...30v nA -100 VGS = -30v Max. Units Conditions --- S VDS = 50V, ID = 4.8A 38 ID = 8.0A 9.0 nC VDS = 40...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...ange Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from...30v nA -100 VGS = -30v Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...ange Soldering Temperature, for 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Amb...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...S = 15V 7.4 VGS = 10V, See Fig. 10 15 VDD = 25V 17 ID = 1.0A ns 46 RG = 6.0, VGS = 10V 34 RD = 25 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Con...
Description Power MOSFET(Vdss=30v, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech...
Description Power MOSFET(Vdss= -30v)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ... Maximum -30 20 -2.3 -1.8 -10 1.6 2.0 1.3 57 -1.3 0.20 -5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalan...
Description Power MOSFET(Vdss=-30v, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique...
Description Power MOSFET(Vdss=30v, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...ange Soldering Temperature, for 10 seconds Max. -6.7 -4.7 -27 3.7 43 0.29 20 140 -6.7 4.3 -4.5 -55 to + 175 300 (1.6mm from case ) U...30v --- I D = -6.7A ns --- RG = 24 --- RD = 4.0, See Fig. 10 Between lead, nH 7.5 --- and center of...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...ange Soldering Temperature, for 10 seconds Max. -11 -7.7 -44 3.7 60 0.40 20 240 -11 6.0 -4.5 -55 to + 175 300 (1.6mm from case ) Uni...30v 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 --- and ce...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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For 10 30v Found Datasheets File :: 31263    Search Time::1.453ms    
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