100v 4a pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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100v 4a Datasheet PDF File

For 100v 4a Found Datasheets File :: 1882 Search Time::5.375ms
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				SANKEN[Sanken electric]
Part No.	SLA5023
OCR Text	...ons ID=250A, VGS=0V VGS=10V VDS=100v, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4a VGS=10V, ID=2A VGS=4V, ID=2A VDS=25V, f=1.0MHz, VGS=0V ID=4a, VDD=50V, VGS=10V ISD=4a, VGS=0V IF=100mA j-a j-c VISO Tj Tstg sEquivalent circuit diagram 1 ...
Description	PNP Darlington N-channel MOSFET 3-phase motor drive
File Size	34.69K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5801
OCR Text	...--- VGS = 10V --- 6.5 --- VDD = 100v --- 8.0 --- ID = 0.36A ns --- 8.8 --- RG = 53 --- 19 --- VGS = 10V --- 88 --- VGS = 0V --- 18 --- VDS ...4a 0.7A 0.9A Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform...
Description	Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的） Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
File Size	119.47K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU EA0520N IRFRU120A
OCR Text	...e Current : 10 A (Max.) @ VDS = 100v Lower RDS(ON) : 0.155 (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 ID = 8.4 A D-PAK 2 1 3 1 ...4a,VGS=0V TJ=25 C ,IF=9.2A diF/dt=100A/ s 4 O Notes ; 1 Repetitive Rating : Pulse Width Limit...
Description	Advanced Power MOSFET Avalanche Rugged Technology N-CHANNEL POWER MOSFET 100v N-Channel A-FET / Substitute of IRFU110 100v N-Channel A-FET / Substitute of IRFR120 (IRFR120A / IRFU120A) Advanced Power MOSFET
File Size	254.49K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text	... Avalanche Rated D VDSS = 100v G S RDS(on) = 0.21 ID = 9.4a Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area...
Description	Power MOSFET(Vdss=100v, Rds(on)=0.21ohm, Id=9.4a) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100v Single N-Channel HEXFET Power MOSFET in a D-Pak package 100v Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
File Size	145.98K / 10 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRFR120 IRFU120 FN2414
OCR Text	100v, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advance...4a, 100v * rDS(ON) = 0.270 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited ...
Description	8.4a, 100v, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA (IRFR120 / IRFU120) N-Channel Power MOSFETs From old datasheet system
File Size	55.39K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
Part No.	STB8NC50-1 STP8NC50FP STP8NC50 STB8NC50
OCR Text	... ISD =8 A, di/dt = 100A/s VDD = 100v, Tj = 150C (see test circuit, Figure 5) 470 3.2 13.7 Test Conditions Min. Typ. Max. 8 32 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe...
Description	N-CHANNEL 500V - 0.7 OHM - 8A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET N-CHANNEL 500V - 0.7 OHM - 8A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET N - CHANNEL POWER MOSFET N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET N沟道500V - 0.7ohm - 8A条TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩
File Size	350.90K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STB8NC50
OCR Text	...ISD = 8A, di/dt = 100A/s, VDD = 100v, Tj = 150C (see test circuit, Figure 5) 470 3.2 13.7 Test Conditions Min. Typ. Max. 8 32 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe...
Description	N-CHANNEL 500V 0.7 OHM 8A D2PAK POWERMESH II MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMeshII MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh?II MOSFET
File Size	440.53K / 9 Page	View it Online	Download Datasheet

				HI-SINCERITY MICROELECTRONICS, CORP. Hi-Sincerity Mocroelectronics
Part No.	HIRF630
OCR Text	...20V ID=10A VDS=200V VGS=10V VDD=100v ID=5A VGS=10V ID=5.0A, VG = 10V VDS=10V, VGS=10V VGS=10V, ID = 5.4a VGS=0V VDS=25V f=1MHz HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Character...
Description	N-Channel MOSFETs N沟道MOSFET
File Size	51.97K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF630N IRF630NL IRF630NS
OCR Text	... = 160V 17 VGS = 10V --- VDD = 100v --- ID = 5.4a ns --- RG = 13 --- RD = 18 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 575 --- VGS = 0V 89 --- VDS = 25V 25 --- pF = 1.0MHz Source-Drain...
Description	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
File Size	152.79K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3710Z IRFU3710Z
OCR Text	...e Allowed up to Tjmax VDSS = 100v G S RDS(on) = 18m ID = 42A Description Specifically designed for Automotive applications, this ...4a 4.8A BOTTOM 33A TOP RG 20V VGS D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclampe...
Description	100v Single N-Channel Automotive HEXFET Power MOSFET in a I-Pak package AUTOMOTIVE MOSFET Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
File Size	210.55K / 11 Page	View it Online	Download Datasheet

For 100v 4a Found Datasheets File :: 1882 Search Time::5.375ms
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