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104.6mm Datasheet PDF File

For 104.6mm Found Datasheets File :: 928 Search Time::1.703ms
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				International Rectifier http://
Part No.	IRL1104
OCR Text	...que, 6-32 or M3 screw. Max. 104 74 416 167 1.1 16 340 62 17 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	89.15K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ44EPBF
OCR Text	... 25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	143.86K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ44E IRFZ44EPBF
OCR Text	...25C, IS = 29A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 29A --- 177 266 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fi...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
File Size	94.75K / 8 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	S8082
OCR Text	... application circuit s8082 104 m vin1 vin2 vcc rs 104 zd 1 2 3 4 5 6 7 8 gnd v o1 v o2 pv cc sv cc v ctl v in1 v in2 s8082 ksd-i7f014-003 10 sept., 2010 rev. 03 1ch bi-directional motor driver ...
Description	1CH Bi-Directional Motor Drive IC
File Size	386.70K / 12 Page	View it Online	Download Datasheet

				TriQuint Semiconductor,Inc.
Part No.	TGF2022-06
OCR Text	... 51.9 12.9 56.99 0.257 0.400 e 104.7 28.1 41.5 8.3 43.55 0.415 0.522 e 127.7 28.7 37.0 8.0 48.44 0.432 0.556 e 125.1 dbm % db w pf - effi...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) 8qlws+(07fhoo 5hihuhqfh...
Description	DC - 20 GHz Discrete power pHEMT
File Size	220.54K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR2PM
OCR Text	...2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSI...6mm 120 SOLDER LAND : 2mm 100 CURVES APPLY 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-...
Description	LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	47.49K / 4 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc.
Part No.	TGF2022-06
OCR Text	... 29.6 51.9 12.9 0.4 104.5 28.1 41.5 8.3 0.525 128.9 28.7 37.0 8.0 0.562 125.7 dbm % db ...6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) unit phemt cell refere...
Description
File Size	179.08K / 10 Page	View it Online	Download Datasheet

				BRIGHT LED ELECTRONICS CORP
Part No.	BM-41EG57MD
OCR Text	... features : 1. 4.118 inch (104.6mm) matrix height. 2. square size 12.0 12.0mm. 3. low power requirement. 4. excellent characters appearance. 5. solid state reliability. 6. multiplex drive , column anode com. and row catho...
Description	hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
File Size	402.36K / 3 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	416PA504M 416MA203P 416XA502P A201P PA104M 416XA202PJIT 416MA104M 416MA104P
OCR Text	.../21 416m how to order 416 p a 104 m common part p - top adjust 2.5mm x 5.0mm m - top adjust 5.0mm x 5.0mm x - side adjust 2.5mm x 5.0mm ad...6mm low cost trimmer the first two digits are significant figures of resistance value and the third ...
Description	Trimmers
File Size	208.85K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN8250 IRHN7250
OCR Text	...urface Temperature Weight 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150 Pre-Radiation IRHN7250, IRHN8250 Units A W W/K V mJ A mJ V/ns ...6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from...
Description	TRANSISTOR N-CHANNEL(BVdss=200V Rds(on)=0.10ohm Id=26A) TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
File Size	523.50K / 14 Page	View it Online	Download Datasheet

For 104.6mm Found Datasheets File :: 928 Search Time::1.703ms
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