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ADPOW[Advanced Power Technology]
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| Part No. |
APTGF660U60D4
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| OCR Text |
...rse Bias Safe Operation Area
1100a@520V
January, 2005
Max ratings 600 825 660 1100 20 2770
Unit V A
APTGF660U60D4
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(o... |
| Description |
Single Switch - IGBT
Single switch NPT IGBT Power Module
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| File Size |
197.14K /
3 Page |
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it Online |
Download Datasheet
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Dynex Semiconductor, Ltd.
DYNEX SEMICONDUCTOR LTD
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| Part No. |
DIM100CHS12-A000
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| OCR Text |
...= 100a, v r = 600v, di f /dt = 1100a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery e... |
| Description |
100 A, 1200 V, N-CHANNEL IGBT C, MODULE-7
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| File Size |
135.95K /
8 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STRH100N10FSY3
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| OCR Text |
.... i sd 80 a, di/dt 1100a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 3.7 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit... |
| Description |
72 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
213.69K /
13 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STRH100N10FSY2
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| OCR Text |
... (3) 3. i sd < 80a, di/dt < 1100a/s, v dd = 80%v (br)dss peak diode recovery voltage slope 3.7 v/ns t stg storage temperature ?55 to 175 c t j max. operating junction temperature 175 c table 2. thermal data symbol parameter value unit ... |
| Description |
72 A, 100 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
199.77K /
9 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
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| Part No. |
APTGF660U60D4
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| OCR Text |
...fe operation area t j = 125c 1100a@520v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 3 5 2 1 5 3 4 1 2 v ces = 600v i c = 660a... |
| Description |
Single switch NPT IGBT Power Module 单开关不扩散核武器条约IGBT功率模块
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| File Size |
196.60K /
3 Page |
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it Online |
Download Datasheet |
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Naina Semiconductor
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| Part No. |
604DCR
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| OCR Text |
...e range v rrm , v drm peak = 1100a) v tm i h i l v t0 r t to- 200ab 6 04dcr 4205450 ? fax: 0120 -4273653 i drm /i rrm , maximum at t j = t j maximum ma 40 values units 1 50 a/s 9.0 s 15 0 symbol va... |
| Description |
Phase Control Thyristor Capsules
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| File Size |
176.22K /
2 Page |
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it Online |
Download Datasheet |
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