| |
|
 |
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
NDT3055L
|
| OCR Text |
...d of 2oz Cu.
0.066 in2
c. 110oc/W when mounted on a 0.00123 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
NDT3055L Rev.A1
Typical Electrical Characteristics
25 I D ,... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect TransistorA0V.1ΩN沟道逻辑增强型场效应管（漏电A, 漏源电压60V，导通电.1Ω 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
226.33K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
NDT3055
|
| OCR Text |
...d of 2oz Cu.
0.066 in2
c. 110oc/W when mounted on a 0.00123 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
NDT3055 Rev.B
Typical Electrical Characteristics
15 I D , D... |
| Description |
N-Channel Enhancement Mode Field Effect TransistorA0V.1ΩN沟道增强型场效应管（漏电A, 漏源电压60V，导通电.1Ω 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
224.50K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
RFT3055 RFT3055LE HGTG20N120CND FN4537
|
| OCR Text |
...therwise specified
2.5 RJA = 110oc/W 2.0
1.5
1.0
0.5
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIEN... |
| Description |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
| File Size |
95.41K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUF75309T3ST
|
| OCR Text |
...verse Recovered Charge NOTE: 2. 110oc/W measured using FR-4 board with 0.164 in 2 footprint for 1000 seconds.
(c)2001 Fairchild Semiconductor Corporation HUF75309T3ST Rev. B
SYMBOL VSD trr QRR ISD = 3A
TEST CONDITIONS
MIN -
TYP... |
| Description |
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
|
| File Size |
181.08K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
