12.2-12.8ghz pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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12.2-12.8ghz Datasheet PDF File

For 12.2-12.8ghz Found Datasheets File :: 802 Search Time::3.031ms
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				Linear
Part No.	LTC4403-2 LTC4403-1
OCR Text	... + RFDET - 22k VHOLD 12 TXENB VREF VHOLD 150k 51k 150k CREF MUX CONTROL PA PB 100 12 100 8 VHOLD 6 PCTL 9 BSEL 4403 BD 4403i LTC4403-1/LTC4403-2 APPLICATIONS INFORMATION Operation The LTC4403-1/-2 single/dua...
Description	Multiband RF Power Controllers for EDGE/TDMA
File Size	196.02K / 12 Page	View it Online	Download Datasheet

				ericsson
Part No.	ROK101008
OCR Text	... -75 -20 30MHz to 1GHz 1GHz to 12.75GHz -74 -60 -70 -57 -47 dBm dBm dBm dBm Condition Symbol Min Typ Max Unit Fr...2 +5 +10 +15 750 170 +4 +25 +40 +40 1000 -36 -30 -47 -47 kHz dBm kHz kHz kHz kHz dBm dBm dBm d...
Description	Bluetooth MCM Point to Point
File Size	638.00K / 18 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181R Q62702-F1685
OCR Text	...power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 430 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 75 C Junction temperature Ambient temperature Storage temperature Thermal Res...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.01K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181W Q62702-F1501
OCR Text	...power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 340 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 91 C Junction temperature Ambient temperature Storage temperature Thermal Res...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.99K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181 Q62702-F1271
OCR Text	...power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ... + 150 430 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 75 C Junction temperature Ambient temperature Storage temperature Thermal Res...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	61.12K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7168C 7168CT_N
OCR Text	...shap. MITSUBISHI ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND GaAs POWER AMPLIFIER ABSOLUTE ...2 MIN 1710 1850 Vd1=Vd2=3.2V,Po=33dBm -- -- -- -- -- Limits TYP MAX -- -- -- 1250 -- -- -- 1785 MHz ...
Description	UHF BAND GaAs POWER AMPLIFIER From old datasheet system
File Size	75.54K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP405B
OCR Text	...ns 0.6 Ratings 15 4.5 1.5 12 55 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector ...2 SBFP405B Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) ...
Description	UHF to C Band Low-Noise Amplifier Osc. Applications
File Size	21.36K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...0 typ. 17.5 22 16 21 15 1.3 1.5 12 10 22 20 0.16 7 10 13 1.8 2.0 max. Unit dB dB dB dB Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50 Output third order intercept point VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT ...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	... Symbol Gms \|S21\|2 IL F50 P-1dB 12 10 OIP3 22 20 CCB CR 7 0.15 10 13 pF dBm min. typ. 18 21.5 16 21 16 1.15 1.3 max. Unit dB dB dB dB dBm Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50 Output third order int...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Media Devices Limited
Part No.	FMM5017VF
OCR Text	...bol VDD VGG Pin Tstg Top Rating 12 -7 17 -55 to +125 -40 to +85 Unit V V dBm C C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) ...2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 199...
Description	GaAs MMIC From old datasheet system
File Size	86.68K / 4 Page	View it Online	Download Datasheet

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