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Renesas
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Part No. |
2SK3214
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OCR Text |
...res
* Low on-resistance R DS = 130m typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
TO-220AB
...rl = 6
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance ... |
Description |
Transistors>Switching/MOSFETs
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File Size |
50.32K /
8 Page |
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it Online |
Download Datasheet
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SYNC-POWER[SYNC POWER Crop.]
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Part No. |
SPP1413S32RG SPP1413
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OCR Text |
...
FEATURES -20V/-2.4A,RDS(ON)=130m@VGS=- 10V -20V/-2.9A,RDS(ON)=150m@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) ...rl=15 ID-1.0A,VGEN=-10V RG=6 VDS=-10V,VGS=0V f=1MHz VDS=0V,VGS=12V VDS=-20V,VGS=0V VDS=-20V,VGS=0V T... |
Description |
P-Channel Enhancement Mode MOSFET
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File Size |
199.38K /
8 Page |
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it Online |
Download Datasheet
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Shenzhen Jin Yu Semiconductor Co., Ltd.
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Part No. |
XP152A12COMR
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OCR Text |
...) xp152a12comr 130m ? 190m parameter symbol limit unit drain-source voltage v ds -20 gate-source voltage v gs ...rl=6 ? i d -1.a, v gen = -4.5v r g = 6 34 60 ns input capacitance c iss 415 ... |
Description |
20 V P-Channel Enhancement Mode MOSFET
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File Size |
2,335.30K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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