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Part No.	APT8015JVFR APT8015
OCR Text	...t = 100A/s) 280 950 2.5 17.7 16.1 36.2 560 1600 THERMAL / PACKAGE CHARACTERISTICS Symbol RJC RJA VIsolation Torque Characteristic ...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	...SOURCE VOLTAGE (VOLTS) 20 16 VDS=100V VDS=250V VDS=400V TJ =+150C TJ =+25C 12 8 10 5 4 300 600 900 1200 1500 Q...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

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Part No.	APT8018JN
OCR Text	...VDS=80V VDS=160V VDS=400V 12 16 100 50 TJ =+150C TJ =+25C 8 TJ =-55C 10 5 4 200 400 600 800 1000 Qg, TOTAL GATE CHARGE ...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	POWER MOS IV 800V 40A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.06K / 4 Page	View it Online	Download Datasheet

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Part No.	APT8020JFLL APT6017JFLL
OCR Text	... Amps 800 33 142 30 40 520 4.16 -55 to 150 300 33 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissi...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.28K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8020JLL
OCR Text	... NF A I 800 33 142 30 40 520 4.16 300 33 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.75K / 2 Page	View it Online	Download Datasheet

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Part No.	APT8024JFLL
OCR Text	...pF 4420 850 140 163 21 92 17 16 51 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Del...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.21K / 2 Page	View it Online	Download Datasheet

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Part No.	APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text	...IT 4420 850 140 163 21 92 17 16 51 10 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.72K / 2 Page	View it Online	Download Datasheet

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Part No.	APT8028JVR APT5010JVR
OCR Text	... 112 30 40 500 4 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C ...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	... MOSFETS 800 27 108 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

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Part No.	APT8030JVFR
OCR Text	...T pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge...M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 ...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

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