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Nanya Techology
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Part No. |
NT5DS16M16CG
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OCR Text |
..., and NT5DS16M16CG are die C of 256Mb SDRAM devices based using DDR interface. They are all based on Nanya's 110 nm design process. Read or Write command are used to select the bank and the starting column location for the burst access.
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Description |
(NT5DSxxMxCx) 256Mb SDRAM
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File Size |
2,443.24K /
78 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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Part No. |
K4N56163QF-GC25 K4N56163QF-GC30 K4N56163QF-GC37
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OCR Text |
...-gc37 266mhz 533mbps/pin the 256mb gddr2 sdram chip is organized as 4mbit x 16 i/o x 4banks banks device. this synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000mb/sec/p in for general applicatio... |
Description |
256Mbit gDDR2 SDRAM
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File Size |
1,264.03K /
73 Page |
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it Online |
Download Datasheet
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Price and Availability
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