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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR00000'>3 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR10000'>3 S29GL064M90FCIR20 S29GL256M10TAIR10000'>3 S29GL064M90TDIR10000'>3 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR00000'>3 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR0000'>30000'>3 S29GL064M90TBIR0000'>30000'>3 S29GL064M90TBIR0000'>32 S29GL064M90TFIR20000'>3 S29GL256M10TFIR20000'>3 S29GL064M90BCIR10000'>3 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR00000'>3 S29GL064M90BDIR0000'>30000'>3 S29GL064M90BDIR02 S29GL064M90BDIR0000'>32 S29GL064M90BDIR20000'>3 S29GL064M90TBIR22 S29GL064M90TBIR20000'>3 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR10000'>3 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR20000'>3 S29GL064M90FBIR00000'>3 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR10000'>3 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR20000'>3 SPANSIONLLC-S29GL064M90FFIR0000'>32
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Description |
MOSFET, Switching; VDSS (V): 0000'>300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-0000'>3P MOSFET, Switching; VDSS (V): 0000'>30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-0000'>3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 0000'>30; RDS (ON) typ. (ohm) @10V: 0.00000'>36; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-0000'>3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 0000'>30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 20000'>30; ID (A): 0000'>35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.00000'>3; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-0000'>3PFM MOSFET, Switching; VDSS (V): 0000'>300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-0000'>3P 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 0000'>3.0伏只页面模式闪存具有0.20000'>3微米工艺技术的MirrorBit 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 4M X 16 flash 0000'>3V PROM, 90 ns, PDSO48 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 4M X 16 flash 0000'>3V PROM, 90 ns, PBGA64 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 16M X 16 flash 0000'>3V PROM, 100 ns, PDSO56 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 8M X 16 flash 0000'>3V PROM, 90 ns, PDSO56 0000'>3.0 volt-only page mode flash Memory featuring 0.20000'>3 um MirrorBit process technology 8M X 8 flash 0000'>3V PROM, 90 ns, PBGA60000'>3 MOSFET, Switching; VDSS (V): 0000'>30; ID (A): 0000'>30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.010000'>3 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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