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ST Microelectronics
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| Part No. |
STP95N4F3
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| OCR Text |
...g tj = 25c, i d = 40a, v dd = 30v single pulse avalanche energy 400 mj t j t stg operating junction temperature storage temperature -55 to...80a v gs =10v (see figure 13) 40 11 8 54 nc nc nc
std95n4f3 - stp95n4f3 - stu95n4f3 electrical c... |
| Description |
N-channel Power MOSFET
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| File Size |
346.28K /
14 Page |
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ST Microelectronics
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| Part No. |
STP95N04
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| OCR Text |
...) starting tj=25c, id =40a, vdd=30v (5) when mounted on 1inch2 fr4 2oz cu board (6)pulsed: pulse duration = 300s, duty cycle 1.5% symbol par...80a, v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery cu... |
| Description |
N-channel Power MOSFET
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| File Size |
297.01K /
14 Page |
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it Online |
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Infineon
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| Part No. |
SPI100N03S2L-03
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| OCR Text |
...ate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leaka...80a v gs =4.5v, i d =80a, smd version r ds(on) - - 2.8 2.5 3.7 3.4 m w drain-source on-stat... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-262, RDSon = 3mOhm, 100A, LL
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| File Size |
526.93K /
8 Page |
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it Online |
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Infineon Technologies A...
Infineon Technologies AG
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| Part No. |
IPB80P03P3L-04 IPI80P03P3L-04 IPP80P03P3L-04
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| OCR Text |
...te voltage drain current
V DS=-30v, VGS=0, Tj=25C V DS=-30v, VGS=0, Tj=150C3)
A -0.1 -10
10
-1 -100
100 nA
Gate-source leakage...80a V GS=-10V, I D=-80a, SMD version
RDS(on)
-
1Current limited by bondwire ; with an R thJ... |
| Description |
OptiMOS-P Power-Transistor
80 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
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| File Size |
223.00K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-H5 SPB80N06S2-H5
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| OCR Text |
...1460 420 34 35 72 33 ns
VDD =30v, VGS =10V, ID =80a, RG =2.4
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23 48 116 5.1
31 72 155 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inve... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/263; 80a; 55V; NL; 5.5mOhm
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| File Size |
307.73K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-09 SPB80N06S2-09
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| OCR Text |
... 810 230 21 44 58 42 ns
VDD =30v, VGS =10V, ID =80a, RG =4.7
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12 24 60 5.8
16 37 80 -
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Invers... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
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| File Size |
315.81K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
... 980 280 20 23 50 20 ns
VDD =30v, VGS =10V, ID =80a, RG =3.3
---
15 30 72 6
20 44 96 --
nC
V(plateau) VDD =44V, ID =80a
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inver... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
View
it Online |
Download Datasheet |
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