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IRF[International Rectifier]
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| Part No. |
IRG4BC20KD IRG4BC20KDPBF
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| OCR Text |
... See Fig. 9,10,14 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 -- TJ = 150C, See Fig. 11,14 37 -- IC = 9.0A, VCC = 480V ns 220 -- VGE = 15V, RG = 50 160 -- Energy losses include "tail" 0.85 -- mJ and diode reverse recov... |
| Description |
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A)
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| File Size |
197.00K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
CPV363M4K
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| OCR Text |
...Fig. 9, 10, 18 0.50 --- s VCC = 360V, TJ = 125C VGE = 15V, RG = 23, VCPK < 500V --- TJ = 150C, See Fig.10, 11, 18 --- ns IC = 6.0A, VCC = 480V --- VGE = 15V, RG = 23 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- VG... |
| Description |
IGBT IGBT SIP MODULE Short Circuit Rated UltraFast
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| File Size |
170.59K /
10 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRG4PC40KD IRG4PC40KDPBF
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| OCR Text |
... 9,10,14 1.71 2.3 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 52 -- TJ = 150C, 37 -- IC = 25A, VCC = 480V ns 220 -- VGE = 15V, RG = 10 140 -- Energy losses include "tail" 2.67 -- mJ See Fig. 11,14 13 -- nH Measured 5mm fr... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.1V的电压，@和VGE \u003d 15V的，集成电路\u003d 25A条）
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
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| File Size |
181.03K /
10 Page |
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it Online |
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Sanyo Electric Co., Ltd.
Sanyo Semicon Device
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| Part No. |
2SK3072
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| OCR Text |
...s Conditions ID=300A, VGS=0 VDS=360V, VGS=0 VGS=10V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15mA ID=15mA, VGS=10V ID=15mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 450 10 10 1.0 14 28 210 230 20 5 3 275 300 2.0 typ max ... |
| Description |
Ultrahigh-Speed Switching Applications 超高速开关应
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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| File Size |
26.87K /
4 Page |
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it Online |
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Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
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| Part No. |
2SK3515 2SK3515-01 2SK3515-01MR
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| OCR Text |
...50A VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 VCC=225V ID=8A VGS=10V L=5.53mH Tch=25C IF=8A VGS=0V Tch=25C IF=8A VGS=0V -di/dt=100A/s Tch=25C Tch=... |
| Description |
N CHANNEL SILICON POWER MOSFET 8 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
93.11K /
4 Page |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411
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| OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON EOFF td(ON)I t... |
| Description |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
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| File Size |
116.56K /
7 Page |
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it Online |
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Price and Availability
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