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  40-40mm Datasheet PDF File

For 40-40mm Found Datasheets File :: 2326    Search Time::4.578ms    
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    IPD06N03L

INFINEON[Infineon Technologies AG]
Part No. IPD06N03L
OCR Text ...D06N03L W A 45 120 40 Ptot 100 ID 20 40 60 80 100 120 140 160 C 190 35 30 80 25 60 20 15 10 20 5 0 0 0 0 20 40 60 80 100 120 140 160 C 190 40 TC TC 4 Max. transient thermal impedance Z thJC = f (tp) pa...
Description OptiMOS Buck converter series
OptiMOS Buck converter series
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LL

File Size 157.77K  /  8 Page

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    IPD07N03L IPU07N03L

INFINEON[Infineon Technologies AG]
Part No. IPD07N03L IPU07N03L
OCR Text ... 24 P tot 100 ID 20 40 60 80 100 120 140 160 C 190 20 80 16 60 12 40 8 20 4 0 0 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 4 Max. transient thermal impedance ZthJC = f (tp)...
Description OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.8mOhm, 30A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series 的OptiMOS降压转换器系

File Size 156.88K  /  8 Page

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    SPB08P06P SPP08P06P SPB08P06PSMD

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPB08P06P SPP08P06P SPB08P06PSMD
OCR Text ... SPB08P06P Unit max. 3.6 62 62 40 K/W RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Pa...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30

File Size 96.10K  /  9 Page

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    SPD08N10 SPU08N10

INFINEON[Infineon Technologies AG]
Part No. SPD08N10 SPU08N10
OCR Text ... Value 8.4 5.4 33.6 30 4 6 20 40 -55... +175 55/150/56 Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpulse EAS EAR d...40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PC...
Description SIPMOS Power Transistor

File Size 120.56K  /  8 Page

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    SPD08P06P SPU08P06P

INFINEON[Infineon Technologies AG]
Part No. SPD08P06P SPU08P06P
OCR Text ...V SPD08P06P 50 -10 W 40 35 A -8 -7 Ptot 30 25 20 15 10 5 0 0 ID 20 40 60 80 100 120 140 160C 190 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160C 190 TC TC Safe operating area Transie...
Description Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30

File Size 113.11K  /  9 Page

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    BAS16S Q62702-A1241

SIEMENS[Siemens Semiconductor Group]
Part No. BAS16S Q62702-A1241
OCR Text ...100 50 50 0 0 20 40 60 80 100 120 C 150 0 0 0.5 1.0 V 1.5 TA,TS VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax ...
Description From old datasheet system
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)

File Size 62.93K  /  4 Page

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    BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q62702-A1160 Q62702-A1161 BAT6404W Q62702-A1162 Q62702-A1159

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q62702-A1160 Q62702-A1161 BAT6404W Q62702-A1162 Q62702-A1159
OCR Text ... power dissipation Symbol Value 40 250 120 800 250 250 250 150 -55...+150 C mW Unit V mA VR IF IFAV IFSM BAT 64W , TS120C Ptot Tota...40mm x 40mm x 1.5mm / 6cm 2 Cu Electrical Characteristics at TA = 25 C, unless otherwise specifie...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system

File Size 68.69K  /  6 Page

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    BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A3470

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A3470
OCR Text ...torage temperature Symbol Value 40 250 120 800 250 150 -55...+150 mW C Unit V mA VR IF I FAV I FSM Ptot Tj T stg Thermal Resistance Ju...40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 ...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Ten Output Zero Delay Buffer
INVERTER 5V-INPUT 900V-OUTPUT
From old datasheet system

File Size 32.83K  /  3 Page

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    BAT64-07 BAT6407 Q62702-A964

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64-07 BAT6407 Q62702-A964
OCR Text ...e Forward current Symbol Values 40 250 120 800 mW 250 150 - 55 ... + 150 495 355 C Unit V mA VR IF Average forward current (50/60Hz,...40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jun-27-1996 BAT 64-07 Electric...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system

File Size 88.92K  /  4 Page

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    BAT64 BAT64-04 BAT64-05 BAT64-06 Q62702-A961 Q62702-A963 Q62702-A879 Q62702-A962

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64 BAT64-04 BAT64-05 BAT64-06 Q62702-A961 Q62702-A963 Q62702-A879 Q62702-A962
OCR Text ...Power dissipation Symbol Values 40 250 120 800 mW 250 150 - 55 ... + 150 495 355 C Unit V mA VR IF IFSM Ptot Tj Tstg RthJA RthJS Ave...40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical ...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Recognised Certification- 5W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system

File Size 91.55K  /  3 Page

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For 40-40mm Found Datasheets File :: 2326    Search Time::4.578ms    
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