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Advanced Power Technolo... Advanced Power Technology, Ltd.
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Part No. |
APT5010JVR
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OCR Text |
...
VDs=100V VDs=250V
12 VDs=400v 8
10 5
4
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 4,7... |
Description |
POWER MOs V 500V 44A 0.100 Ohm Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs. ECONOLINE: REC3-s_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous short Circiut Protection- Efficiency to 80% 电源MOs V是一个高电压N新一代通道增强型功率MOsFET
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File Size |
71.26K /
4 Page |
View
it Online |
Download Datasheet
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Advanced Power Technolo... Advanced Power Technology Ltd.
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Part No. |
APT5010LLC APT5010B2LC APT5010B2LC-06
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OCR Text |
...
VDs=100V VDs=250V
12 VDs=400v 8
10 5
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOUR...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583
5,045,903 ... |
Description |
47 A, 500 V, 0.1 ohm, N-CHANNEL, si, POWER, MOsFET Power MOs VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOsFETs. POWER MOs VI 500V 47A 0.100 Ohm
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File Size |
64.96K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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