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  400v s Datasheet PDF File

For 400v s Found Datasheets File :: 13140    Search Time::3.312ms    
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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s, VR = 350V (see Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR =...
Description POWER MOs V 500V 44A 0.100 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 4,7...
Description POWER MOs V 500V 44A 0.100 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
ECONOLINE: REC3-s_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous short Circiut Protection- Efficiency to 80% 电源MOs V是一个高电压N新一代通道增强型功率MOsFET

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    APT5010LLC APT5010B2LC APT5010B2LC-06

Advanced Power Technolo...
Advanced Power Technology Ltd.
Part No. APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOUR...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 ...
Description 47 A, 500 V, 0.1 ohm, N-CHANNEL, si, POWER, MOsFET
Power MOs VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOsFETs.
POWER MOs VI 500V 47A 0.100 Ohm

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 ...
Description Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs. 电源MOs V是一个高电压N新一代通道增强型功率MOsFET
POWER MOs V 500V 47A 0.100 Ohm

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 ...
Description Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs. 电源MOs V是一个高电压N新一代通道增强型功率MOsFET
POWER MOs V 500V 47A 0.100 Ohm

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    APT5012 APT5012WVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5012 APT5012WVR
OCR Text ... VDs=100V VDs=250V 12 VDs=400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sOU...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 ...
Description POWER MOs V 500V 40A 0.120 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

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    APT5014B2VR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5014B2VR
OCR Text ...150C 10 5 TJ =+25C 12 VDs=400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sO...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 4,7...
Description Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
POWER MOs V 500V 37A 0.140 Ohm

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    APT5014LVR

ADPOW[Advanced Power Technology]
Part No. APT5014LVR
OCR Text ...150C 10 5 TJ =+25C 12 VDs=400v 8 1 0.5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE-TO-sO...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 ...
Description POWER MOs V 500V 37A 0.140 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text ...50 TJ =+150C TJ =+25C 12 VDs=400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 4,7...
Description POWER MOs V 500V 32A 0.150 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

File Size 60.16K  /  4 Page

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    APT5017BVFR

ADPOW[Advanced Power Technology]
Part No. APT5017BVFR
OCR Text ...50 TJ =+150C TJ =+25C 12 VDs=400v 8 10 5 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGEs vs GATE...s devices are covered by one or more of the following U.s.patents: 4,895,810 5,256,583 5,045,903 4,7...
Description POWER MOs V 500V 30A 0.170 Ohm
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.

File Size 62.45K  /  4 Page

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