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NTE[NTE Electronics]
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| Part No. |
NTE3076
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| OCR Text |
.... . . . . . . . . . . . . . . . 420ma Per Segment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Decimial Point . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
0.560 Inch, Seven Segment, 1 Digit w/Overflow and , Common Anode, RHDP
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| File Size |
68.99K /
3 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7N803645M K7N801845M
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| OCR Text |
...t Icc and parameters ICC ; from 420ma to 320mA at -67 , from 370mA to 300mA at -75 from 300mA to 250mA at -10. ISB ; from 70mA to 60mA at -67 , from 60mA to 50mA at -75 from 50mA to 40mA at -10. 1.Changed VOL Max value from 0.2V to 0.4V . 1... |
| Description |
256K X 36 & 512K X 18 PIPELINED N-T RAM - TM
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| File Size |
393.89K /
18 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K7N163601M K7N161801M
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| OCR Text |
...t Icc and parameters Icc ; from 420ma to 400mA at -67, from 370mA to 380mA at -75, from 300mA to 320mA at -10, 1. Add tCYC 167MHz. 1. Final Spec Release. Draft Date Dec. 22. 1998 May. 27. 1999 Sep. 04. 1999 Remark Preliminary Preliminary Pr... |
| Description |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
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| File Size |
314.12K /
20 Page |
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it Online |
Download Datasheet
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Price and Availability
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