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  55125 Datasheet PDF File

For 55125 Found Datasheets File :: 111    Search Time::2.046ms    
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    HN2S05FU

Toshiba Semiconductor
Part No. HN2S05FU
OCR Text ...15 10 200 * 100 * 1* 100 * 125 -55125 -40110 Unit V V mA mA A mW C C C 1.ANODE 2.ANODE 3.ANODE 4.CATHODE 5.CATHODE 6.CATHODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current...
Description High-Speed Switching Applications

File Size 202.01K  /  3 Page

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    MC982

Isahaya Electronics Corporation
Part No. MC982
OCR Text ...atings 35 30 4 300 100 450 125 -55125 Unit V V A mA mA mW Internal connection Parameter Peak reverse voltage DC reverse voltage Surge current Peak forward current Average rectification current Total allowance dissipation(Ta=25) ...
Description DIODE

File Size 282.57K  /  4 Page

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    ISA2191AT2

Isahaya Electronics Corporation
Part No. ISA2191AT2
OCR Text ...atings -60 -6 -50 -150 125 125 -55125 Unit V V V mA mW A ISAHAYAT-USM TERMINAL CONNECTER MARKING Abbreviation for Kind hFE Item B C D E package mounted on 9x19x1mm glass-epoxy substrate. AF running No. GJ Month of ...
Description Transistor

File Size 139.35K  /  3 Page

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    RT3WLMM

Isahaya Electronics Corporation
Part No. RT3WLMM
OCR Text ...RATING Tr1 50 6 50 200 150 125 -55125 Tr2 60 UNIT V V V mA mW MARKING 6 5 4 . WL M 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Si...
Description Composite Transistor

File Size 142.38K  /  5 Page

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    RT3C99M

Isahaya Electronics Corporation
Part No. RT3C99M
OCR Text ...re RATING 50 40 20 200 150 125 -55125 UNIT V V V mA mW MARKING 6 5 4 .C 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type ELECTRICAL CHARAC...
Description Composite Transistor

File Size 113.89K  /  3 Page

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    HN2D01FU

Toshiba Semiconductor
Part No. HN2D01FU
OCR Text ...ng 85 80 240 * 80 * 1* 200 125 -55125 Unit V V mA mA A mW C C TOSHIBA Weight: 6.2mg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) ...
Description Silicon Epitaxial Planar Type Ultra High Speed Switching Application

File Size 203.89K  /  4 Page

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    RT3J11M

Isahaya Electronics Corporation
Part No. RT3J11M
OCR Text ...erature -50 8 -100 150 125 -55125 . . 2 3 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3J11M Composite Transistor For high speed switching Silicon -channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25) Symbol V(BR)DSS I...
Description Composite Transistor

File Size 142.16K  /  4 Page

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    RT3J22M

Isahaya Electronics Corporation
Part No. RT3J22M
OCR Text ...erature -30 8 -200 150 125 -55125 . . 2 3 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3J22M Composite Transistor For high speed switching Silicon -channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25) Symbol V(BR)DSS I...
Description Composite Transistor

File Size 143.79K  /  4 Page

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    RT3J33M

Isahaya Electronics Corporation
Part No. RT3J33M
OCR Text ...erature -20 8 -200 150 125 -55125 . . 2 3 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3J33M Composite Transistor For high speed switching Silicon -channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25) Symbol V(BR)DSS I...
Description Composite Transistor

File Size 144.04K  /  4 Page

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    BD7561G BD7561G09 BD7561SG BD7562F BD7562FVM BD7562SF BD7562SVM BD7542F BD7542SF BD7542SFVM BD7542VM BD7541G BD7541SG-TR

Rohm
Part No. BD7561G BD7561G09 BD7561SG BD7562F BD7562FVM BD7562SF BD7562SVM BD7542F BD7542SF BD7542SFVM BD7542VM BD7541G BD7541SG-TR
OCR Text ...Vid Vicm Topr Tstg Tjmax -4085 -55125 125 BD7561GBD7562 F/FVM BD7541GBD7542 F/FVM Technical Note BD7561SG BD7562S F/FVM BD7541SG BD7542S F/FVM Unit V V V 15.5 VDD-VSS (VSS-0.3)(VDD0.3) -40105 Note: Absolute maximum rating ...
Description OP-AMP, PDSO5
High Voltage Operation CMOS Operational Amplifiers:Input/Output Full Swing

File Size 544.00K  /  21 Page

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