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IR
http://
International Rectifier, Corp.
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| Part No. |
IRGPS40B12 IRGPS40B120U
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| OCR Text |
...e Charge vs. VGE ICE = 40A; L = 600h
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 0.001 0.... |
| Description |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
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| File Size |
112.22K /
10 Page |
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Download Datasheet
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Vishay Semiconductors
IRF[International Rectifier]
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| Part No. |
20MT120UF 20MT120UFPBF
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| OCR Text |
... Charge vs. VGE ICE = 5.0A; L = 600h
www.irf.com
9
20MT120UF
I27124 rev. D 02/03
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 C 2 3 3
0.01
0.02 0.01
J
Ri (C/W) i (sec) ... |
| Description |
40 A, 1200 V, N-CHANNEL IGBT MTP, 18 PIN
UltraFast NPT IGBT
1200V UltraFast 10-30 kHz Full-Bridge IGBT in a MTP package
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| File Size |
694.93K /
13 Page |
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Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
40MT120UH 40MT120UHT
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| OCR Text |
... Charge vs. VGE ICE = 5.0A; L = 600h
www.irf.com
9
40MT120UH
I27126 rev. C 02/03
1
Thermal Response ( Z thJC )
0.1
0.01
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1 R1 R1 2 R2 R2 R3 R3 C 2 3 3
0.001
1
Ri (C/W)... |
| Description |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
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| File Size |
673.49K /
13 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10M09LVFR APT10M09B2VFR
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| OCR Text |
...20 40
4 Starting T = +25C, L = 600h, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature. 6 I -I [Cont.], di/ = 100A/s, V = 50V, T 150C, R = 2.0W S D R j G dt
1 Repetitive Rating: Pulse width limited by m... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
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| File Size |
39.92K /
2 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10M09LVR APT10M09B2VR
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| OCR Text |
...20 40
4 Starting T = +25C, L = 600h, R = 25W, Peak I = 100A j G L 5 The maximum current is limited by lead temperature.
1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
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| File Size |
38.80K /
2 Page |
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Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT20M18B2VR_04 A20M18LVR APT20M18B2VR APT20M18B2VR04
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| OCR Text |
...71
4 Starting Tj = +25C, L = 600h, RG = 25, Peak IL = 100A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID100A di/dt 200A/s VR 200V TJ 150C 6 The maximum current is limited by lead tem... |
| Description |
POWER MOS V MOSFET
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| File Size |
150.70K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF50N06
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| OCR Text |
...mum junction temperature 2. L = 600h, IAS = 31A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 50A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp... |
| Description |
60V N-Channel MOSFET
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| File Size |
628.86K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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